R5011FNX Datasheet Nch 500V 11A Power MOSFET llOutline V 500V DSS R (Max.) 0.52 DS(on) TO-220FM I 11A D P 59W D llInner circuit llFeatures 1) Fast reverse recovery time(t ). rr 2) Low on-resistance. 3) Fast switching speed. 4) Gate-source voltage (V ) guaranteed to GSS be 30V. 5) Drive circuits can be simple. 6) Parallel use is easy. llPackaging specifications Packing Bulk Reel size (mm) - llApplication Tape width (mm) - Type Switching Basic ordering unit (pcs) 500 Taping code - Marking R5011FNX llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit V Drain - Source voltage 500 V DSS *1 T = 25C I 11 A C D Continuous drain current *1 T = 100C I 5.4 A C D *2 Pulsed drain current I 44 A DP V Gate - Source voltage 30 V GSS *3 Avalanche current, repetitive I 5.5 A AR *3 E Avalanche energy, single pulse 8.1 mJ AS *5 E Avalanche energy, repetitive 3.5 mJ AR *4 Power dissipation (T = 25C) P 59 W C D T Junction temperature 150 j Operating junction and storage temperature range T -55 +150 stg www.rohm.com 2016 ROHM Co., Ltd. All rights reserved. 1/12 20160324 - Rev.001 Not Recommended for New Designs R5011FNX Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Conditions Values Unit Reverse diode dv/dt dv/dt - 15 V/ns Drain - Source voltage slope dv/dt V = 400V, T = 125 50 V/ns DS j llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. R Thermal resistance, junction - case - - 2.10 /W thJC R Thermal resistance, junction - ambient - - 70 /W thJA T Soldering temperature, wavesoldering for 10s - - 265 sold llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 500 - - V (BR)DSS GS D voltage V = 500V, V = 0V DS GS Zero gate voltage I T = 25C - 1 100 A DSS j drain current T = 125C - - 10000 j I Gate - Source leakage current V = 30V, V = 0V - - 100 nA GSS GS DS V Gate threshold voltage V = 10V, I = 1mA 2.0 - 4.0 V GS(th) DS D V = 10V, I = 5.5A GS D Static drain - source *6 R T = 25C - 0.40 0.52 DS(on) j on - state resistance T = 125C - 0.85 - j R Gate resistance f =1MHz, open drain - 8.8 - G www.rohm.com 2/12 20160324 - Rev.001 2016 ROHM Co., Ltd. All rights reserved. Not Recommended for New Designs