R5021ANX Nch 500V 21A Power MOSFET Datasheet l Outline V 500V DSS TO-220FM R (Max.) 0.21W DS(on) I 21A D P 50W (1)(2) (3) D l l Features Inner circuit 1) Low on-resistance. (1) Gate 2) Fast switching speed. (2) Drain (3) Source 3) Gate-source voltage (V ) guaranteed to be 30V. GSS 4) Drive circuits can be simple. *1 Body Diode 5) Parallel use is easy. 6) Pb-free lead plating RoHS compliant lPackaging specifications Packaging Bulk Reel size (mm) - lApplication Tape width (mm) - Switching Power Supply Type Basic ordering unit (pcs) 500 Taping code - Marking R5021ANX lAbsolute maximum ratings(T = 25C) a Parameter Symbol Value Unit Drain - Source voltage V 500 V DSS *1 T = 25C I 21 A c D Continuous drain current *1 T = 100C A I 10.1 c D *2 Pulsed drain current I 84 A D,pulse V Gate - Source voltage 30 V GSS *3 Avalanche energy, single pulse 29.6 mJ E AS *4 Avalanche energy, repetitive E 3.5 mJ AR *3 Avalanche current I 10.5 A AR Power dissipation (T = 25C) P 50 W c D T Junction temperature 150 C j Range of storage temperature T C -55 to +150 stg *5 Reverse diode dv/dt 15 V/ns dv/dt www.rohm.com 2012 ROHM Co., Ltd. All rights reserved. 2012.10 - Rev.C 1/13 Not Recommended for New DesignsData Sheet R5021ANX lAbsolute maximum ratings Parameter Symbol Conditions Values Unit V = 400V, I = 21A DS D Drain - Source voltage slope dv/dt 50 V/ns T = 125C j lThermal resistance Values Parameter Symbol Unit Min. Typ. Max. R Thermal resistance, junction - case - - 2.5 C/W thJC Thermal resistance, junction - ambient R - - 70 C/W thJA T Soldering temperature, wavesoldering for 10s - - 265 C sold lElectrical characteristics(Ta = 25C) Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 500 - - V (BR)DSS GS D voltage Drain - Source avalanche V V = 0V, I = 21A - 580 - V (BR)DS GS D breakdown voltage V = 500V, V = 0V DS GS Zero gate voltage I T = 25C - 0.1 100 mA DSS j drain current T = 125C - - 1000 j Gate - Source leakage current I V = 30V, V = 0V - - nA 100 GSS GS DS V V = 10V, I = 1mA Gate threshold voltage 2.5 - 4.5 V GS (th) DS D V = 10V, I = 10.5A GS D Static drain - source *6 T = 25C R - 0.16 0.21 W j DS(on) on - state resistance T = 125C - 0.33 - j R Gate input resistance f = 1MHz, open drain - 11.6 - W G www.rohm.com 2012 ROHM Co., Ltd. All rights reserved. 2012.10 - Rev.C 2/13 Not Recommended for New Designs