X-On Electronics has gained recognition as a prominent supplier of R5021ANX MOSFETs across the USA, India, Europe, Australia, and various other global locations. R5021ANX MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

R5021ANX ROHM

R5021ANX electronic component of ROHM
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Part No.R5021ANX
Manufacturer: ROHM
Category: MOSFETs
Description: MOSFET Silicon N-channel MOSFET, 10V Drive, N-Channel, Contains G-S protection diode, Low on-resistance, Fast switching, Wide SOA
Datasheet: R5021ANX Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
22: USD 4.7865 ea
Line Total: USD 105.3 
Availability - 485
Ship by Thu. 21 Nov to Wed. 27 Nov
MOQ: 22  Multiples: 1
Pack Size: 1
Availability Price Quantity
485
Ship by Thu. 21 Nov to Wed. 27 Nov
MOQ : 22
Multiples : 1
22 : USD 4.7865
25 : USD 4.5808
50 : USD 4.4063
100 : USD 4.2567
250 : USD 4.1276
500 : USD 4.0153

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Series
Transistor Type
Brand
Configuration
Height
Length
Width
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
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Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the R5021ANX from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the R5021ANX and other electronic components in the MOSFETs category and beyond.

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R5021ANX Nch 500V 21A Power MOSFET Datasheet l Outline V 500V DSS TO-220FM R (Max.) 0.21W DS(on) I 21A D P 50W (1)(2) (3) D l l Features Inner circuit 1) Low on-resistance. (1) Gate 2) Fast switching speed. (2) Drain (3) Source 3) Gate-source voltage (V ) guaranteed to be 30V. GSS 4) Drive circuits can be simple. *1 Body Diode 5) Parallel use is easy. 6) Pb-free lead plating RoHS compliant lPackaging specifications Packaging Bulk Reel size (mm) - lApplication Tape width (mm) - Switching Power Supply Type Basic ordering unit (pcs) 500 Taping code - Marking R5021ANX lAbsolute maximum ratings(T = 25C) a Parameter Symbol Value Unit Drain - Source voltage V 500 V DSS *1 T = 25C I 21 A c D Continuous drain current *1 T = 100C A I 10.1 c D *2 Pulsed drain current I 84 A D,pulse V Gate - Source voltage 30 V GSS *3 Avalanche energy, single pulse 29.6 mJ E AS *4 Avalanche energy, repetitive E 3.5 mJ AR *3 Avalanche current I 10.5 A AR Power dissipation (T = 25C) P 50 W c D T Junction temperature 150 C j Range of storage temperature T C -55 to +150 stg *5 Reverse diode dv/dt 15 V/ns dv/dt www.rohm.com 2012 ROHM Co., Ltd. All rights reserved. 2012.10 - Rev.C 1/13 Not Recommended for New DesignsData Sheet R5021ANX lAbsolute maximum ratings Parameter Symbol Conditions Values Unit V = 400V, I = 21A DS D Drain - Source voltage slope dv/dt 50 V/ns T = 125C j lThermal resistance Values Parameter Symbol Unit Min. Typ. Max. R Thermal resistance, junction - case - - 2.5 C/W thJC Thermal resistance, junction - ambient R - - 70 C/W thJA T Soldering temperature, wavesoldering for 10s - - 265 C sold lElectrical characteristics(Ta = 25C) Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 500 - - V (BR)DSS GS D voltage Drain - Source avalanche V V = 0V, I = 21A - 580 - V (BR)DS GS D breakdown voltage V = 500V, V = 0V DS GS Zero gate voltage I T = 25C - 0.1 100 mA DSS j drain current T = 125C - - 1000 j Gate - Source leakage current I V = 30V, V = 0V - - nA 100 GSS GS DS V V = 10V, I = 1mA Gate threshold voltage 2.5 - 4.5 V GS (th) DS D V = 10V, I = 10.5A GS D Static drain - source *6 T = 25C R - 0.16 0.21 W j DS(on) on - state resistance T = 125C - 0.33 - j R Gate input resistance f = 1MHz, open drain - 11.6 - W G www.rohm.com 2012 ROHM Co., Ltd. All rights reserved. 2012.10 - Rev.C 2/13 Not Recommended for New Designs

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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