X-On Electronics has gained recognition as a prominent supplier of R6012ANX MOSFETs across the USA, India, Europe, Australia, and various other global locations. R6012ANX MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

R6012ANX ROHM

R6012ANX electronic component of ROHM
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See Product Specifications
Part No.R6012ANX
Manufacturer: ROHM
Category: MOSFETs
Description: N-Channel 600 V 12A (Ta) 50W (Tc) Through Hole TO-220FM
Datasheet: R6012ANX Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
29: USD 3.462 ea
Line Total: USD 100.4 
Availability - 485
Ship by Tue. 12 Nov to Mon. 18 Nov
MOQ: 29  Multiples: 1
Pack Size: 1
Availability Price Quantity
89
Ship by Tue. 12 Nov to Mon. 18 Nov
MOQ : 29
Multiples : 1
29 : USD 3.462
50 : USD 3.3302

485
Ship by Tue. 12 Nov to Mon. 18 Nov
MOQ : 29
Multiples : 1
29 : USD 3.462
50 : USD 3.3302
100 : USD 3.2171
250 : USD 3.1196
500 : USD 3.0347

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Forward Transconductance - Min
Power Dissipation
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the R6012ANX from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the R6012ANX and other electronic components in the MOSFETs category and beyond.

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R6012ANX Nch 600V 12A Power MOSFET Datasheet Outline TO-220FM V 600V DSS R (Max.) 0.42 DS(on) I 12A D P 50W D (1)(2 )(3 ) Features Inner circuit 1) Low on-resistance. (1) Gate 2) Fast switching speed. (2) Drain 3) Gate-source voltage (V ) guaranteed to be 30V. (3) Source GSS 4) Drive circuits can be simple. *1 Body Diode 5) Parallel use is easy. 6) Pb-free lead plating RoHS compliant Packaging specifications Packing Bulk Reel size (mm) - Tape width (mm) - Application Type Basic ordering unit (pcs) 500 Switching Power Supply Taping code - Marking R6012ANX Absolute maximum ratings (T = 25C) a Parameter Symbol Value Unit V Drain - Source voltage 600 V DSS *1 T = 25C I 12 A c D Continuous drain current *1 T = 100C A I 6.1 c D *2 Pulsed drain current I 48 A D,pulse V Gate - Source voltage 30 V GSS *3 Avalanche energy, single pulse 9.6 mJ E AS *4 Avalanche energy, repetitive E 3.5 mJ AR *3 Avalanche current 6 A I AR P Power dissipation (T = 25C) 50 W D c T Junction temperature 150 C j T Range of storage temperature 55 to +150 C stg *5 Reverse diode dv/dt 15 V/ns dv/dt www.rohm.com 2012 ROHM Co., Ltd. All rights reserved. 2012.01 - Rev.B 1/13 Not Recommended for New DesignsData Sheet R6012ANX Absolute maximum ratings Parameter Symbol Conditions Values Unit V = 480V, I = 12A DS D Drain - Source voltage slope dv/dt 50 V/ns T = 125C j Thermal resistance Values Parameter Symbol Unit Min. Typ. Max. R Thermal resistance, junction - case - - 2.5 C/W thJC Thermal resistance, junction - ambient R - - 70 C/W thJA T Soldering temperature, wavesoldering for 10s - - 265 C sold Electrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 600 - - V (BR)DSS GS D voltage Drain - Source avalanche V V = 0V, I = 12A - 700 - V (BR)DS GS D breakdown voltage V = 600V, V = 0V DS GS Zero gate voltage I T = 25C - 0.1 100 A DSS j drain current T = 125C - - 1000 j I Gate - Source leakage current V = 30V, V = 0V - - nA 100 GSS GS DS V V = 10V, I = 1mA Gate threshold voltage 2.5 - 4.5 V GS (th) DS D V = 10V, I = 6A GS D Static drain - source *6 R T = 25C - 0.32 0.42 DS(on) j on - state resistance T = 125C - 0.6 - j R Gate input resistance f = 1MHz, open drain - 8.2 - G www.rohm.com 2012 ROHM Co., Ltd. All rights reserved. 2012.01 - Rev.B 2/13 Not Recommended for New Designs

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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