R6012ANX Nch 600V 12A Power MOSFET Datasheet Outline TO-220FM V 600V DSS R (Max.) 0.42 DS(on) I 12A D P 50W D (1)(2 )(3 ) Features Inner circuit 1) Low on-resistance. (1) Gate 2) Fast switching speed. (2) Drain 3) Gate-source voltage (V ) guaranteed to be 30V. (3) Source GSS 4) Drive circuits can be simple. *1 Body Diode 5) Parallel use is easy. 6) Pb-free lead plating RoHS compliant Packaging specifications Packing Bulk Reel size (mm) - Tape width (mm) - Application Type Basic ordering unit (pcs) 500 Switching Power Supply Taping code - Marking R6012ANX Absolute maximum ratings (T = 25C) a Parameter Symbol Value Unit V Drain - Source voltage 600 V DSS *1 T = 25C I 12 A c D Continuous drain current *1 T = 100C A I 6.1 c D *2 Pulsed drain current I 48 A D,pulse V Gate - Source voltage 30 V GSS *3 Avalanche energy, single pulse 9.6 mJ E AS *4 Avalanche energy, repetitive E 3.5 mJ AR *3 Avalanche current 6 A I AR P Power dissipation (T = 25C) 50 W D c T Junction temperature 150 C j T Range of storage temperature 55 to +150 C stg *5 Reverse diode dv/dt 15 V/ns dv/dt www.rohm.com 2012 ROHM Co., Ltd. All rights reserved. 2012.01 - Rev.B 1/13 Not Recommended for New DesignsData Sheet R6012ANX Absolute maximum ratings Parameter Symbol Conditions Values Unit V = 480V, I = 12A DS D Drain - Source voltage slope dv/dt 50 V/ns T = 125C j Thermal resistance Values Parameter Symbol Unit Min. Typ. Max. R Thermal resistance, junction - case - - 2.5 C/W thJC Thermal resistance, junction - ambient R - - 70 C/W thJA T Soldering temperature, wavesoldering for 10s - - 265 C sold Electrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 600 - - V (BR)DSS GS D voltage Drain - Source avalanche V V = 0V, I = 12A - 700 - V (BR)DS GS D breakdown voltage V = 600V, V = 0V DS GS Zero gate voltage I T = 25C - 0.1 100 A DSS j drain current T = 125C - - 1000 j I Gate - Source leakage current V = 30V, V = 0V - - nA 100 GSS GS DS V V = 10V, I = 1mA Gate threshold voltage 2.5 - 4.5 V GS (th) DS D V = 10V, I = 6A GS D Static drain - source *6 R T = 25C - 0.32 0.42 DS(on) j on - state resistance T = 125C - 0.6 - j R Gate input resistance f = 1MHz, open drain - 8.2 - G www.rohm.com 2012 ROHM Co., Ltd. All rights reserved. 2012.01 - Rev.B 2/13 Not Recommended for New Designs