Data Sheet
10V Drive Nch MOSFET
R6018ANJ
Structure Dimensions (Unit : mm)
Silicon N-channel MOSFET
LPTS
10.1
4.5
1.3
Features
1.24
1) Low on-resistance.
2) High-speed switching.
2.54 0.4
0.78
3) Wide SOA.
5.08 2.7
(1) Gate
(1) (2) (3)
4) Drive circuits can be simple.
(2) Drain
(3) Source
5) Parallel use is easy.
Application
Switching
Packaging specifications Inner circuit
Package Taping
Type
Code TL
1
Basic ordering unit (pieces) 1000
R6018ANJ
(1) (2) (3)
(1) Gate
(2) Drain
1 BODY DIODE
(3) Source
Absolute maximum ratings (Ta = 25 C)
Parameter Symbol Limits Unit
Drain-source voltage V 600 V
DSS
Gate-source voltage V 30 V
GSS
Continuous I *3 18 A
D
Drain current
Pulsed I *1 A
72
DP
*3
Source current Continuous I 18 A
S
(Body Diode)
Pulsed I *1 A
SP 72
Avalanche current *2
I 9A
AS
*2
Avalanche energy E 21.6 mJ
AS
*4
Power dissipation P 100 W
D
Channel temperature T 150 C
ch
Range of storage temperature T 55 to 150 C
stg
*1 Pw10s, Duty cycle1%
*2 L 500H, V =50V, R =25, T =25C
DD G ch
*3 Limited only by maximum temperature allowed.
*4 T =25C
C
Thermal resistance
Parameter Symbol Limits Unit
Channel to Case R 1.25 C / W
th (ch-c)
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2011 ROHM Co., Ltd. All rights reserved. 2011.10 - Rev.A
1/5
13.1
3.0 9.0
1.0
1.2Data Sheet
R6018ANJ
Electrical characteristics (Ta = 25 C)
Parameter Symbol Min. Typ. Max. Unit Conditions
Gate-source leakage I -- 100 nA V = 30V, V =0V
GSS GS DS
Drain-source breakdown voltage V 600 - - V I =1mA, V =0V
(BR)DSS D GS
Zero gate voltage drain current I - - 100 AV =600V, V =0V
DSS DS GS
Gate threshold voltage V 2.5 - 4.5 V V =10V, I =1mA
GS (th) DS D
Static drain-source on-state
*
R I =9A, V =10V
- 0.21 0.27
DS (on) D GS
resistance
*
Forward transfer admittance l Y l 6.5 - - S V =10V, I =9A
fs DS D
Input capacitance C - 2050 - pF V =25V
iss DS
Output capacitance C - 1400 - pF V =0V
oss GS
Reverse transfer capacitance C - 60 - pF f=1MHz
rss
Turn-on delay time t - 37 - ns V 300V, I =9A
d(on) * DD D
Rise time t - 85 - ns V =10V
r * GS
Turn-off delay time t - 155 - ns R =33.3
d(off) L
*
Fall time t - 65 - ns R =10
f * G
Total gate charge Q - 55 - nC V 300V
g * DD
Gate-source charge Q - 10 - nC I =18A
*
gs D
Gate-drain charge Q - 22 - nC V =10V
gd GS
*
*Pulsed
Body diode characteristics (Source-Drain)
Parameter Symbol Min. Typ. Max. Unit Conditions
*
Forward Voltage V - - 1.5 V I =18A, V =0V
SD S GS
*Pulsed
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2011 ROHM Co., Ltd. All rights reserved.
2/5 2011.10 - Rev.A