X-On Electronics has gained recognition as a prominent supplier of R8008ANX MOSFETs across the USA, India, Europe, Australia, and various other global locations. R8008ANX MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

R8008ANX ROHM

R8008ANX electronic component of ROHM
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Part No.R8008ANX
Manufacturer: ROHM
Category: MOSFETs
Description: MOSFET 10V Drive Nch MOSFET
Datasheet: R8008ANX Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
26: USD 3.7775 ea
Line Total: USD 98.22 
Availability - 141
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ: 26  Multiples: 1
Pack Size: 1
Availability Price Quantity
141
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 26
Multiples : 1
26 : USD 3.7775
50 : USD 3.6337
100 : USD 3.5102

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Gate Charge Qg
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Series
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
Category
Brand Category
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We are delighted to provide the R8008ANX from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the R8008ANX and other electronic components in the MOSFETs category and beyond.

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R8008ANX Datasheet Nch 800V 8A Power MOSFET llOutline V 800V DSS R (Max.) 1.03 DS(on) TO-220FM I 8A D P 66W D llInner circuit llFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (V ) guaranteed GSS to be 30V. 4) Drive circuits can be simple. 5) Parallel use is easy. 6) Pb-free lead plating RoHS compliant llPackaging specifications Packing Bulk Reel size (mm) - llApplication Tape width (mm) - Type Switching Power Supply Basic ordering unit (pcs) 500 Taping code - Marking R8008ANX llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit V Drain - Source voltage 800 V DSS *1 T = 25C I 8 A C D Continuous drain current *1 T = 100C I 3.9 A C D *2 I Pulsed drain current 32 A DP V Gate - Source voltage 30 V GSS *3 I Avalanche current, single pulse 4 A AS *3 E Avalanche energy, single pulse 4.2 mJ AS *4 E Avalanche energy, repetitive 3.3 mJ AR Power dissipation (T = 25C) P 66 W c D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg Reverse diode dv/dt dv/dt 15 V/ns www.rohm.com 1/13 2016 ROHM Co., Ltd. All rights reserved. 20160324 - Rev.002 Not Recommended for New Designs R8008ANX Datasheet llAbsolute maximum ratings Parameter Symbol Conditions Values Unit V = 640V, I = 8A DS D Drain - Source voltage slope dv/dt 50 V/ns T = 125 j llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. R Thermal resistance, junction - case - - 1.87 /W thJC Thermal resistance, junction - ambient R - - 70 /W thJA T Soldering temperature, wavesoldering for 10s - - 265 sold llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 800 - - V (BR)DSS GS D voltage Drain - Source avalanche V V = 0V, I = 4A - 900 - V (BR)DS GS D breakdown voltage V = 800V, V = 0V DS GS Zero gate voltage T = 25C I - 0.1 100 A DSS j drain current T = 125C - - 1000 j Gate - Source leakage current I V = 30V, V = 0V - - 100 nA GSS GS DS Gate threshold voltage V V = 10V, I = 1mA 3 - 5 V GS(th) DS D V = 10V, I = 4.0A GS D Static drain - source *6 R T = 25C - 0.79 1.03 j DS(on) on - state resistance T = 125C - 1.54 - j R Gate resistance f = 1MHz, open drain - 6.6 - G www.rohm.com 2/13 2016 ROHM Co., Ltd. All rights reserved. 20160324 - Rev.002 Not Recommended for New Designs

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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