RAL045P01TCR ROHM

Data Sheet 1.5V Drive Pch MOSFET RAL045P01 Structure Dimensions (Unit : mm) Silicon P-channel MOSFET TUMT6 SOT-363T Features 1) Low On-resistance. 2) Small high power package. 3) Low voltage drive.(1.5V) Abbreviated symbol : SC Application Switching Packaging specifications Inner circuit (6) (5) (4) Package Taping Type Code TCR 2 Basic ordering unit (pieces) 3000 RAL045P01 1 (1) Drain (2) Drain (3) Gate Absolute maximum ratings (Ta = 25 C) (4) Source (5) Drain (1) (2) (3) Parameter Symbol Limits Unit (6) Drain 1 ESD PROTECTION DIODE Drain-source voltage V 12 V DSS 2 BODY DIODE Gate-source voltage V 0 to 8 V GSS Continuous I 4.5 A D Drain current *1 Pulsed I 18 A DP Continuous I 0.8 A Source current S (Body Diode) *1 Pulsed I 18 A SP *2 Power dissipation P 1W D Channel temperature Tch 150 C Range of storage temperature Tstg 55 to 150 C *1 Pw10s, Duty cycle1% *2 Mounted on a ceramic board. Thermal resistance Parameter Symbol Limits Unit * Channel to Ambient Rth (ch-a) 125 C / W *Mounted on a ceramic board. www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2011.03 - Rev.A 1/6 Not Recommended for New Designs 0.2Max.Data Sheet RAL045P01 Electrical characteristics (Ta = 25 C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage I -- 10 AV = 8V, V =0V GSS GS DS Drain-source breakdown voltage V 12 - - V I = 1mA, V =0V (BR)DSS D GS Zero gate voltage drain current I -- 10 AV = 12V, V =0V DSS DS GS Gate threshold voltage V 0.3 - 1.0 V V = 6V, I = 1mA GS (th) DS D -22 30 I = 4.5A, V = 4.5V D GS -28 39 I = 2.2A, V = 2.5V Static drain-source on-state D GS * R m DS (on) resistance -38 57 I = 2.2A, V = 1.8V D GS - 50 100 I = 0.9A, V = 1.5V D GS * Forward transfer admittance l Y l 5.5 - - S I = 4.5A, V = 6V fs D DS Input capacitance C - 4200 - pF V = 6V iss DS Output capacitance C - 350 - pF V =0V oss GS Reverse transfer capacitance C - 330 - pF f=1MHz rss Turn-on delay time t - 16 - ns I = 2.2A, V 6V *********** d(on) D DD Rise time t - 60 - ns V = 4.5V ************** r GS Turn-off delay time t - 400 - ns R =2.7 d(off)**************** L Fall time t **************** - 150 - ns R =10 f G Total gate charge Q - 40 - nC I = 4.5A ** g D Gate-source charge Q ** - 6.5 - nC V 6V gs DD Gate-drain charge Q - 6.0 - nC V = 4.5V gd ********** GS *Pulsed Body diode characteristics (Source-Drain) (Ta = 25 C) Parameter Symbol Min. Typ. Max. Unit Conditions * Forward Voltage V -- 1.2 V I = 4.5A, V =0V SD s GS *Pulsed www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2/6 2011.03 - Rev.A Not Recommended for New Designs