X-On Electronics has gained recognition as a prominent supplier of RCJ200N20TL MOSFETs across the USA, India, Europe, Australia, and various other global locations. RCJ200N20TL MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

RCJ200N20TL ROHM

Hot RCJ200N20TL electronic component of ROHM
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Part No.RCJ200N20TL
Manufacturer: ROHM
Category: MOSFETs
Description: ROHM Semiconductor MOSFET 10V DRIVE N-Ch MOSFET
Datasheet: RCJ200N20TL Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
20: USD 2.0962 ea
Line Total: USD 41.92 
Availability - 834
Ship by Fri. 08 Nov to Thu. 14 Nov
MOQ: 20  Multiples: 1
Pack Size: 1
Availability Price Quantity
1812
Ship by Thu. 14 Nov to Mon. 18 Nov
MOQ : 1
Multiples : 1
1 : USD 2.5875
10 : USD 2.024
100 : USD 1.725
250 : USD 1.564
500 : USD 1.4605
1000 : USD 1.288
5000 : USD 1.2535
10000 : USD 1.242

834
Ship by Fri. 08 Nov to Thu. 14 Nov
MOQ : 20
Multiples : 1
20 : USD 2.0962
50 : USD 1.8037
100 : USD 1.4917
200 : USD 1.4495
500 : USD 1.2382

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
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Technology
Number of Channels
Vgs - Gate-Source Voltage
Series
Transistor Type
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Cnhts
Hts Code
Mxhts
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the RCJ200N20TL from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RCJ200N20TL and other electronic components in the MOSFETs category and beyond.

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RCJ200N20 Nch 200V 20A Power MOSFET Datasheet Outline (2) V 200V DSS LPT(S) (SC-83) R (Max.) 130m DS(on) I 20A D (1) P 106W (3) D Features Inner circuit 1) Low on-resistance. 2) Fast switching speed. (1) Gate 1 (2) Drain 3) Drive circuits can be simple. (3) Source 4) Parallel use is easy. 1 BODY DIODE (1) (2) (3) 5) Pb-free lead plating RoHS compliant 6) 100% Avalanche tested Packaging specifications Packaging Taping Reel size (mm) 330 Application Tape width (mm) 24 Switching Power Supply Type Quantity (pcs) 1,000 Automotive Motor Drive Taping code TL Automotive Solenoid Drive Marking RCJ200N20 Absolute maximum ratings(T = 25C) a Parameter Symbol Value Unit Drain - Source voltage V 200 V DSS *1 T = 25C I 20 A c D Continuous drain current *1 T = 100C I 10.9 A c D *2 Pulsed drain current A I 80 D,pulse V Gate - Source voltage 30 V GSS *3 Avalanche energy, single pulse 32.3 mJ E AS *3 Avalanche current I 10 A AR T = 25C P 106 W c D Power dissipation *4 P 1.56 W T = 25C D a T Junction temperature 150 C j Range of storage temperature T C 55 to 150 stg www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2019.05 - Rev.C 1/12Data Sheet RCJ200N20 Thermal resistance Values Parameter Symbol Unit Min. Typ. Max. R - - 1.17 C/W Thermal resistance, junction - case thJC *4 R - - 80 C/W Thermal resistance, junction - ambient thJA T Soldering temperature, wavesoldering for 10s - - 265 C sold Electrical characteristics(T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. V V = 0V, I = 1mA Drain - Source breakdown voltage 200 - - V (BR)DSS GS D V = 200V, V = 0V DS GS - -25 T = 25C j Zero gate voltage drain current I A DSS V = 200V, V = 0V DS GS - - 100 T = 125C j I V = 30V, V = 0V Gate - Source leakage current -- 100 nA GSS GS DS Gate threshold voltage V V = 10V, I = 1mA 3.0 - 5.0 V GS (th) DS D V = 10V, I = 10A - 100 130 GS D Static drain - source *5 V = 10V, I = 10A R m GS D DS(on) on - state resistance - 220 310 T = 125C j g V = 10V, I = 10A Forward transfer admittance 4.9 9.8 - S fs DS D www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2019.05 - Rev.C 2/12

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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