X-On Electronics has gained recognition as a prominent supplier of RCX220N25 MOSFET across the USA, India, Europe, Australia, and various other global locations. RCX220N25 MOSFET are a product manufactured by ROHM. We provide cost-effective solutions for MOSFET, ensuring timely deliveries around the world.

RCX220N25 ROHM

RCX220N25 electronic component of ROHM
Images are for reference only
See Product Specifications
Part No.RCX220N25
Manufacturer: ROHM
Category: MOSFET
Description: ROHM Semiconductor MOSFET
Datasheet: RCX220N25 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 2.162 ea
Line Total: USD 2.16

Availability - 981
Ship by Wed. 07 Aug to Fri. 09 Aug
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
981
Ship by Wed. 07 Aug to Fri. 09 Aug
MOQ : 1
Multiples : 1
1 : USD 2.162
10 : USD 1.7825
100 : USD 1.4375
250 : USD 1.4145
500 : USD 1.2765
1000 : USD 1.0879
2500 : USD 1.0879
5000 : USD 1.0798
10000 : USD 1.0442

485
Ship by Thu. 01 Aug to Wed. 07 Aug
MOQ : 61
Multiples : 1
61 : USD 1.8489
100 : USD 1.7662
250 : USD 1.6953
500 : USD 1.6342

   
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Continuous Drain Current
Mounting
Operating Temperature Classification
Operating Temp Range
Type
Rad Hardened
Pin Count
Gate-Source Voltage Max
Polarity
Drain-Source On-Volt
Package Type
Number Of Elements
Configuration
Series
Transistor Type
Brand
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the RCX220N25 from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RCX220N25 and other electronic components in the MOSFET category and beyond.

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RCX220N25 Nch 250V 22A Power MOSFET Datasheet Outline V 250V DSS TO-220FM R (Max.) 140m DS(on) I 22A D (3) P (2) 61W D (1) Features Inner circuit 1) Low on-resistance. (1) Gate 2) Fast switching speed. (2) Drain 1 (3) Source 3) Drive circuits can be simple. 4) Parallel use is easy. 1 BODY DIODE (1) (2) (3) 5) Pb-free lead plating RoHS compliant 6) 100% Avalanche tested Packaging specifications Packaging Bulk Reel size (mm) - Application Tape width (mm) - Switching Power Supply Type Quantity (pcs) 500 Automotive Motor Drive Taping code - Automotive Solenoid Drive Marking RCX220N25 Absolute maximum ratings(T = 25C) a Parameter Symbol Value Unit Drain - Source voltage V 250 V DSS *1 T = 25C I 22 A c D Continuous drain current *1 T = 100C I 11.9 A c D *2 Pulsed drain current A I 88 D,pulse V Gate - Source voltage 30 V GSS *3 Avalanche energy, single pulse 36.8 mJ E AS *3 Avalanche current I 11 A AR T = 25C P 61 W c D Power dissipation T = 25C P 2.23 W a D T Junction temperature 150 C j Range of storage temperature T C 55 to 150 stg www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2019.05 - Rev.C 1/12Data Sheet RCX220N25 Thermal resistance Values Parameter Symbol Unit Max. Min. Typ. R - - 2.04 C/W Thermal resistance, junction - case thJC R Thermal resistance, junction - ambient - - 56 C/W thJA T Soldering temperature, wavesoldering for 10s - - 265 C sold Electrical characteristics(T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. V V = 0V, I = 1mA Drain - Source breakdown voltage 250 - - V (BR)DSS GS D V = 250V, V = 0V DS GS I Zero gate voltage drain current -- 25 A DSS T = 25C j I V = 30V, V = 0V Gate - Source leakage current -- 100 nA GSS GS DS V = 10V, I = 1mA Gate threshold voltage V 3.0 - 5.0 V GS (th) DS D V = 10V, I = 11A - 105 140 GS D Static drain - source *4 V = 10V, I = 11A R m GS D DS(on) on - state resistance - 230 320 T = 125C j Forward transfer admittance g V = 10V, I = 11A 612 - S fs DS D www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2019.05 - Rev.C 2/12

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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