X-On Electronics has gained recognition as a prominent supplier of RD3G500GNTL MOSFETs across the USA, India, Europe, Australia, and various other global locations. RD3G500GNTL MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

RD3G500GNTL ROHM

RD3G500GNTL electronic component of ROHM
RD3G500GNTL ROHM
RD3G500GNTL MOSFETs
RD3G500GNTL  Semiconductors

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See Product Specifications
Part No. RD3G500GNTL
Manufacturer: ROHM
Category: MOSFETs
Description: MOSFET NCH 40V 50A POWER
Datasheet: RD3G500GNTL Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.6375 ea
Line Total: USD 1.64 
Availability - 1691
Ship by Fri. 14 Mar to Tue. 18 Mar
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1691
Ship by Fri. 14 Mar to Tue. 18 Mar
MOQ : 1
Multiples : 1
1 : USD 1.6375
10 : USD 1.344
100 : USD 0.9086
250 : USD 0.9075
500 : USD 0.7645
1000 : USD 0.7436
2500 : USD 0.715
10000 : USD 0.7139

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Transistor Type
Brand
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the RD3G500GNTL from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RD3G500GNTL and other electronic components in the MOSFETs category and beyond.

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RD3G500GN Datasheet Nch 40V 50A Power MOSFET llOutline V 40V DSS DPAK R (Max.) 4.9m DS(on) TO-252 I 50A D P 35W D llInner circuit llFeatures 1) Low on - resistance 2) High power package (TO-252) 3) Pb-free lead plating RoHS compliant 4) Halogen free llPackaging specifications Embossed Packing Tape Reel size (mm) 330 llApplication Tape width (mm) 16 Type Switching Quantity (pcs) 2500 Taping code TL Marking RD3G500GN llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit V Drain - Source voltage 40 V DSS *1 I Continuous drain current 50 A D *2 I Pulsed drain current 100 A DP V Gate - Source voltage 20 V GSS *3 I Avalanche current, single pulse 50 A AS *3 E Avalanche energy, single pulse 94 mJ AS *1 P Power dissipation 35 W D T Junction temperature 150 j Operating junction and storage temperature range T -55 to +150 stg www.rohm.com 1/11 2019 ROHM Co., Ltd. All rights reserved. 20190527 - Rev.002 RD3G500GN Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *1 Thermal resistance, junction - case R - - 3.5 /W thJC llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 40 - - V (BR)DSS GS D voltage V I = 1mA (BR)DSS D Breakdown voltage - 26.2 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = 40V, V = 0V - - 1 A DSS DS GS drain current I V = 20V, V = 0V Gate - Source leakage current - - 500 nA GSS GS DS V Gate threshold voltage V = V , I = 1mA 1.0 - 2.5 V GS(th) DS GS D V I = 1mA GS(th) D Gate threshold voltage - -4.9 - mV/ temperature coefficient T referenced to 25 j V = 10V, I = 50A - 3.9 4.9 GS D Static drain - source *4 R m DS(on) on - state resistance V = 4.5V, I = 50A - 4.7 6.3 GS D R Gate resistance f = 1MHz, open drain - 2.1 - G Forward Transfer *4 Y V = 5V, I = 25A 25 - - S fs DS D Admittance *1 Tc=25 , Limited only by maximum temperature allowed. *2 Pw10s , Duty cycle 1% *3 L 0.05mH, V = 20V, R = 25, Starting T = 25 Fig.3-1,3-2 DD G j *4 Pulsed www.rohm.com 2/11 20190527 - Rev.002 2019 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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