X-On Electronics has gained recognition as a prominent supplier of RD3L08BGNTL MOSFETs across the USA, India, Europe, Australia, and various other global locations. RD3L08BGNTL MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

RD3L08BGNTL ROHM

RD3L08BGNTL electronic component of ROHM
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Part No.RD3L08BGNTL
Manufacturer: ROHM
Category: MOSFETs
Description: MOSFET NCH 60V 80A POWER
Datasheet: RD3L08BGNTL Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 2.852 ea
Line Total: USD 2.85 
Availability - 1827
Ship by Thu. 24 Oct to Mon. 28 Oct
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1827
Ship by Thu. 24 Oct to Mon. 28 Oct
MOQ : 1
Multiples : 1
1 : USD 2.852
10 : USD 2.139
100 : USD 1.61
500 : USD 1.3455
1000 : USD 1.288
2500 : USD 1.2305

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Transistor Type
Brand
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the RD3L08BGNTL from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RD3L08BGNTL and other electronic components in the MOSFETs category and beyond.

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RD3L08BGN Datasheet Nch 60V 80A Power MOSFET llOutline V 60V DSS DPAK R (Max.) 5.5m DS(on) TO-252 I 80A D P 119W D llFeatures llInner circuit 1) Low on - resistance 2) High power small mold package (TO-252) 3) Pb-free lead plating RoHS compliant 4) Halogen free 5) 100% Rg and UIS tested llApplication llPackaging specifications Embossed Switching Packing Tape Reel size (mm) 330 Tape width (mm) 16 Type Quantity (pcs) 2500 Taping code TL RD3L08BGN Marking llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V 60 V DSS *1 V = 10V I Continuous drain current 80 A GS D *2 Pulsed drain current I 160 A DP V Gate - Source voltage 20 V GSS *3 Avalanche current, single pulse I 40 A AS *3 E Avalanche energy, single pulse 60 mJ AS *1 P Power dissipation 119 W D Junction temperature T 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 1/11 2019 ROHM Co., Ltd. All rights reserved. 20190527 - Rev.003 RD3L08BGN Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *1 R Thermal resistance, junction - case - - 1.05 /W thJC llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 60 - - V (BR)DSS GS D voltage V I = 1mA (BR)DSS D Breakdown voltage - 60 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = 60V, V = 0V - - 10 A DSS DS GS drain current I Gate - Source leakage current V = 20V, V = 0V - - 500 nA GSS GS DS V V = V , I = 100A Gate threshold voltage 1.0 - 2.5 V GS(th) DS GS D V I = 1mA GS(th) D Gate threshold voltage - -5.6 - mV/ temperature coefficient T referenced to 25 j V = 10V, I = 80A - 4.2 5.5 GS D Static drain - source *4 R m DS(on) on - state resistance V = 4.5V, I = 40A - 5.7 8.1 GS D R Gate resistance f = 1MHz, open drain - 1.6 - G Forward Transfer *4 Y V = 5V, I = 40A 30 - - S fs DS D Admittance *1 T =25 , Limited only by maximum temperature allowed. c *2 Pw10s , Duty cycle 1% *3 L 0.05mH, V = 30V, R = 25, Starting T = 25 Fig.3-1,3-2 DD G j *4 Pulsed www.rohm.com 2/11 20190527 - Rev.003 2019 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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