X-On Electronics has gained recognition as a prominent supplier of RQ3E110AJTB MOSFETs across the USA, India, Europe, Australia, and various other global locations. RQ3E110AJTB MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

RQ3E110AJTB ROHM

RQ3E110AJTB electronic component of ROHM
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See Product Specifications
Part No.RQ3E110AJTB
Manufacturer: ROHM
Category: MOSFETs
Description: N-Channel 30 V 11A (Ta), 24A (Tc) 2W (Ta) Surface Mount 8-HSMT (3.2x3)
Datasheet: RQ3E110AJTB Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.6787 ea
Line Total: USD 0.68 
Availability - 2860
Ship by Mon. 30 Dec to Wed. 01 Jan
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2860
Ship by Mon. 30 Dec to Wed. 01 Jan
MOQ : 1
Multiples : 1
1 : USD 0.6787
10 : USD 0.5555
100 : USD 0.3993
500 : USD 0.3267
1000 : USD 0.3025
3000 : USD 0.2662

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Transistor Type
Brand
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the RQ3E110AJTB from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RQ3E110AJTB and other electronic components in the MOSFETs category and beyond.

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RQ3E110AJ Datasheet Nch 30V 24A Middle Power MOSFET llOutline V 30V DSS R (Max.) 11.7m DS(on) HSMT8 I 24A D P 15W D llInner circuit llFeatures 1) Low on - resistance. 2) Small Surface Mount Package. 3) Pb-free lead plating RoHS compliant llPackaging specifications Embossed Packing Tape Reel size (mm) 330 llApplication Tape width (mm) 12 Type Switching Quantity (pcs) 3000 Taping code TB Marking E110AJ llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V 30 V DSS *1 T = 25C I 24 A c D Continuous drain current T = 25C I 11 A a D *2 I Pulsed drain current 44 A DP V Gate - Source voltage 12 V GSS *3 I Avalanche current, single pulse 11 A AS *3 E Avalanche energy, single pulse 4.5 mJ AS *1 P 15 W D Power dissipation *4 P 2.0 W D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 2019 ROHM Co., Ltd. All rights reserved. 1/11 20190527 - Rev.003 RQ3E110AJ Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *1 Thermal resistance, junction - case R - - 8.1 /W thJC *4 R Thermal resistance, junction - ambient - - 62.5 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 30 - - V (BR)DSS GS D voltage V I = 1mA (BR)DSS D Breakdown voltage - 18 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = 30V, V = 0V - - 1 A DSS DS GS drain current I Gate - Source leakage current V = 12V, V = 0V - - 100 nA GSS GS DS V Gate threshold voltage V = V , I = 1mA 0.5 - 1.5 V GS(th) DS GS D V I = 1mA GS(th) D Gate threshold voltage - -1.8 - mV/ temperature coefficient T referenced to 25 j V = 4.5V, I = 11A - 8.8 11.7 GS D Static drain - source *5 R m DS(on) on - state resistance V = 2.5V, I = 5.5A - 12.6 16.5 GS D Forward Transfer *5 Y V = 5V, I = 11A 9.8 - - S fs DS D Admittance *1 Tc=25 , Limited only by maximum temperature allowed. *2 Pw 10s, Duty cycle 1% *3 L 0.05mH, V = 15V, R = 25, STARTING T = 25 Fig.3-1,3-2 DD G j *4 Mounted on a Cu board (40400.8mm) *5 Pulsed www.rohm.com 2/11 20190527 - Rev.003 2019 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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