X-On Electronics has gained recognition as a prominent supplier of RQ3E150MNTB1 MOSFETs across the USA, India, Europe, Australia, and various other global locations. RQ3E150MNTB1 MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

RQ3E150MNTB1 ROHM

RQ3E150MNTB1 electronic component of ROHM
RQ3E150MNTB1 ROHM
RQ3E150MNTB1 MOSFETs
RQ3E150MNTB1  Semiconductors

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See Product Specifications
Part No. RQ3E150MNTB1
Manufacturer: ROHM
Category: MOSFETs
Description: ROHM Semiconductor MOSFET
Datasheet: RQ3E150MNTB1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 0.5764 ea
Line Total: USD 1729.2 
Availability - 0
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
0
Ship by Fri. 07 Mar to Tue. 11 Mar
MOQ : 3000
Multiples : 3000
3000 : USD 0.5764
6000 : USD 0.5533
24000 : USD 0.5467

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Series
Transistor Type
Brand
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Forward Transconductance - Min
Cnhts
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Hts Code
Mxhts
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Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the RQ3E150MNTB1 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RQ3E150MNTB1 and other electronic components in the MOSFETs category and beyond.

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RQ3E150MN Nch 30V 15A Power MOSFET Datasheet l Outline V 30V DSS HSMT8 R at 10V (Max.) 6.7mW DS(on) R at 4.5V (Max.) 8.9mW DS(on) I 15A D P 2.0W D lFeatures lInner circuit 1) Low on - resistance. (1) Source (5) Drain 2) High Power Small Mold Package (HSMT8). (2) Source (6) Drain (3) Source (7) Drain 3) Pb-free lead plating RoHS compliant (4) Gate (8) Drain *1 ESD PROTECTION DIODE 4) Halogen Free *2 BODY DIODE 5) 100% Rg and UIS Tested lPackaging specifications Packaging Taping Reel size (mm) 330 lApplication Tape width (mm) 12 DC/DC converters Type Basic ordering unit (pcs) 3,000 Taping code TB1 Marking RQ3E15 lAbsolute maximum ratings(T = 25C) ,unless otherwise specified a Parameter Symbol Value Unit V Drain - Source voltage 30 V DSS *1 Continuous drain current A I 15 D *2 Pulsed drain current I 60 A D,pulse V Gate - Source voltage 20 V GSS *3 Power dissipation 2.0 W P D T Junction temperature 150 C j T Range of storage temperature -55 to +150 C stg www.rohm.com 2013 ROHM Co., Ltd. All rights reserved. 2013.02 - Rev.A 1/10 Not Recommended for New DesignsData Sheet RQ3E150MN lThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *3 R - - 62.5 C/W thJA Thermal resistance, junction - ambient R - - - C/W thJC lElectrical characteristics(T = 25C) ,unless otherwise specified a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 30 - - V (BR)DSS GS D voltage V I =1mA Breakdown voltage (BR)DSS D - 35.1 - mV/C temperature coefficient T referenced to 25C j Zero gate voltage drain current I V = 30V, V = 0V - - 1 mA DSS DS GS I Gate - Source leakage current V = 20V, V = 0V - - 10 mA GSS GS DS Gate threshold voltage V V = 10V, I = 1mA 1.2 - 2.5 V GS (th) DS D V Gate threshold voltage I =1mA (GS)th D - - mV/C -4.5 temperature coefficient T referenced to 25C j V =10V, I =15A - 4.8 6.7 GS D Static drain - source *4 R mW DS(on) on - state resistance V =4.5V, I =15A - 6.4 8.9 GS D Gate input resistannce R f = 1MHz, open drain - 2.9 - W G *4 V =10V, I =15A Transconductance g 10.0 - - S DS D fs *1 Limited only by maximum temperature allowed. *2 Pw 10ms, Duty cycle 1% *3 Mounted on a ceramic board. (30300.8mm) *4 Pulsed www.rohm.com 2013 ROHM Co., Ltd. All rights reserved. 2013.02 - Rev.A 2/10 Not Recommended for New Designs

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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