X-On Electronics has gained recognition as a prominent supplier of RQ6E035ATTCR MOSFETs across the USA, India, Europe, Australia, and various other global locations. RQ6E035ATTCR MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

RQ6E035ATTCR ROHM

RQ6E035ATTCR electronic component of ROHM
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See Product Specifications
Part No.RQ6E035ATTCR
Manufacturer: ROHM
Category: MOSFETs
Description: ROHM Semiconductor MOSFET
Datasheet: RQ6E035ATTCR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.4092 ea
Line Total: USD 0.41 
Availability - 3114
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
9
Ship by Thu. 05 Dec to Tue. 10 Dec
MOQ : 1
Multiples : 1
1 : USD 0.2305
10 : USD 0.2248
30 : USD 0.2209
100 : USD 0.2171

3114
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 0.4092
10 : USD 0.2673
100 : USD 0.1375
1000 : USD 0.1254
3000 : USD 0.11
9000 : USD 0.0935
24000 : USD 0.0891

2910
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 200
Multiples : 1
200 : USD 0.5329
250 : USD 0.5114
500 : USD 0.493
1000 : USD 0.477
2500 : USD 0.4628

4704
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 186
Multiples : 1
186 : USD 0.2194
204 : USD 0.2
500 : USD 0.1722
1000 : USD 0.169
2000 : USD 0.1579

2657
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 200
Multiples : 1
200 : USD 0.5329
250 : USD 0.5114
500 : USD 0.493
1000 : USD 0.477
2500 : USD 0.4628

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Series
Transistor Type
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the RQ6E035ATTCR from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RQ6E035ATTCR and other electronic components in the MOSFETs category and beyond.

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RQ6E035AT Datasheet Pch -30V -3.5A Small Signal MOSFET llOutline SOT-457T V -30V DSS SC-95 R (Max.) 50m DS(on) TSMT6 I 3.5A D P 1.25W D llInner circuit llFeatures 1) Low on - resistance 2) Small Surface Mount Package (TSMT6) 3) Pb-free lead plating RoHS compliant llPackaging specifications Embossed Packing Tape Reel size (mm) 180 llApplication Tape width (mm) 8 Type Switching Basic ordering unit (pcs) 3000 Taping code TCR Marking JR llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit V Drain - Source voltage -30 V DSS Continuous drain current I 3.5 A D *1 I Pulsed drain current 12 A DP V Gate - Source voltage 20 V GSS *2 Avalanche current, single pulse I -3.5 A AS *2 E Avalanche energy, single pulse 9.0 mJ AS *3 P 1.25 W D Power dissipation *4 P 0.95 W D Junction temperature T 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 2017 ROHM Co., Ltd. All rights reserved. 1/11 20170317 - Rev.003 RQ6E035AT Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *3 R - - 100 /W thJA Thermal resistance, junction - ambient *4 R - - 132 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = -1mA -30 - - V (BR)DSS GS D voltage V I = -1mA (BR)DSS D Breakdown voltage - -22 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = -30V, V = 0V - - -1 A DSS DS GS drain current I Gate - Source leakage current V = 20V, V = 0V - - 100 nA GSS GS DS V Gate threshold voltage V = V , I = -1mA -1.0 - -2.5 V GS(th) DS GS D V I = -1mA GS(th) D Gate threshold voltage - 2.9 - mV/ temperature coefficient T referenced to 25 j V = -10V, I = -3.5A - 38 50 GS D Static drain - source *5 R m DS(on) on - state resistance V = -4.5V, I = -3.5A - 54 70 GS D R Gate resistance f = 1MHz, open drain - 14 - G Forward Transfer *5 Y V = -5V, I = -3.5A 3.2 - - S fs DS D Admittance *1 Pw 10s, Duty cycle 1% *2 L 1mH, V = -15V, R = 25, Starting T = 25 Fig.3-1,3-2 DD G j *3 Mounted on a ceramic boad (30300.8mm) *4 Mounted on a FR4 (25250.8mm) *5 Pulsed www.rohm.com 2/11 20170317 - Rev.003 2017 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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