X-On Electronics has gained recognition as a prominent supplier of RRL025P03TR MOSFETs across the USA, India, Europe, Australia, and various other global locations. RRL025P03TR MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

RRL025P03TR ROHM

RRL025P03TR electronic component of ROHM
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See Product Specifications
Part No.RRL025P03TR
Manufacturer: ROHM
Category: MOSFETs
Description: MOSFET Med Pwr, Sw MOSFET P Chan, -30V, -2.5A
Datasheet: RRL025P03TR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.5577 ea
Line Total: USD 0.56 
Availability - 3357
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
3357
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 0.5577
10 : USD 0.4961
100 : USD 0.3806
500 : USD 0.3036
1000 : USD 0.2354

3978
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 60
Multiples : 1
60 : USD 0.6842
100 : USD 0.533
200 : USD 0.5315
500 : USD 0.4307
1000 : USD 0.3868
3000 : USD 0.2665

1233
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 210
Multiples : 1
210 : USD 0.5074
250 : USD 0.487
500 : USD 0.4694
1000 : USD 0.4541

2910
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 210
Multiples : 1
210 : USD 0.5074
250 : USD 0.487
500 : USD 0.4694
1000 : USD 0.4541
2500 : USD 0.4407

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Gate Charge Qg
Factory Pack Quantity :
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the RRL025P03TR from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RRL025P03TR and other electronic components in the MOSFETs category and beyond.

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RRL025P03 Pch -30V -2.5A Power MOSFET Datasheet l Outline (6) V -30V DSS (5) TUMT6 (4) R (Max.) 75mW DS(on) I (1) -2.5A D (2) (3) P 1.0W D l l Features Inner circuit 1) Low on - resistance. (1) Drain (2) Drain 2) Built-in G-S Protection Diode. (3) Gate (4) Source 3) Small Surface Mount Package (TUMT6). (5) Drain (6) Drain 4) Pb-free lead plating RoHS compliant *1 ESD PROTECTION DIODE *2 BODY DIODE lPackaging specifications Packaging Taping Reel size (mm) 180 lApplication Tape width (mm) 8 DC/DC converters Type Basic ordering unit (pcs) 3,000 Taping code TR Marking UA lAbsolute maximum ratings(T = 25C) a Parameter Symbol Value Unit Drain - Source voltage V V -30 DSS *1 Continuous drain current I 2.5 A D *2 Pulsed drain current A I 10 D,pulse V Gate - Source voltage 20 V GSS *3 P 1.0 W D Power dissipation *4 0.32 W P D T Junction temperature 150 C j T Range of storage temperature -55 to +150 C stg www.rohm.com 2013 ROHM Co., Ltd. All rights reserved. 2013.02 - Rev.B 1/11Data Sheet RRL025P03 lThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *3 R - - 125 C/W thJA Thermal resistance, junction - ambient *4 R - - 391 C/W thJA lElectrical characteristics(T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = -1mA -30 - - V (BR)DSS GS D voltage V Breakdown voltage I = -1mA (BR)DSS D - -25 - mV/C temperature coefficient T referenced to 25C j I V = -30V, V = 0V Zero gate voltage drain current - - -1 mA DSS DS GS Gate - Source leakage current I V = 20V, V = 0V - - 10 mA GSS GS DS V V = -10V, I = -1mA Gate threshold voltage -1 - -2.5 V GS (th) DS D V I = -1mA Gate threshold voltage (GS)th D - 3.9 - mV/C temperature coefficient T referenced to 25C j V = -10V, I = -2.5A - 55 75 GS D V = -4.5V, I = -1.2A - 85 115 GS D Static drain - source *5 R mW DS(on) on - state resistance V = -4.0V, I = -1.2A - 95 125 GS D V = -10V, I = -2.5A, T =125C - 95 135 GS D j R Gate input resistannce f = 1MHz, open drain - 24 - W G *5 Transconductance V = -10V, I = -2.5A 2.0 4.4 - S g DS D fs *1 Limited only by maximum temperature allowed. *2 Pw 10ms, Duty cycle 1% *3 Mounted on a seramic board (30300.8mm) *4 Mounted on a FR4 (15200.8mm) *5 Pulsed www.rohm.com 2013 ROHM Co., Ltd. All rights reserved. 2013.02 - Rev.B 2/11

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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