RRQ030P03 FRA Pch -30V -3A Power MOSFET Datasheet Outline (6) V 30V DSS TSMT6 (5) (4) R (Max.) 75m DS(on) I (1) 3A D (2) P 1.25W (3) D Features Inner circuit 1) Low on - resistance. (1) Drain (2) Drain 2) Built-in G-S Protection Diode. (3) Gate (4) Source 3) Small Surface Mount Package (TSMT6). (5) Drain (6) Drain 4) Pb-free lead plating RoHS compliant 1 ESD PROTECTION DIODE 2 BODY DIODE 5) AEC-Q101 Qualified Packaging specifications Packaging Taping Reel size (mm) 180 Application Tape width (mm) 8 DC/DC converters Type Basic ordering unit (pcs) 3,000 Taping code TR Marking UA Absolute maximum ratings(T = 25C) a Parameter Symbol Value Unit V Drain - Source voltage V 30 DSS *1 Continuous drain current I 3 A D *2 Pulsed drain current A I 12 D,pulse V Gate - Source voltage 20 V GSS *3 P 1.25 W D Power dissipation *4 0.6 W P D T Junction temperature 150 C j Range of storage temperature T C 55 to 150 stg www.rohm.com 2016.06 - Rev.B 2012 ROHM Co., Ltd. All rights reserved. 2012.09 - Rev.B 1/11Data Sheet RRQ030P03FRA Thermal resistance Values Parameter Symbol Unit Min. Typ. Max. *3 R - - 100 C/W thJA Thermal resistance, junction - ambient *4 R - - 208 C/W thJA Electrical characteristics(T = 25C) a <It is the same characteristics for the Tr1 and Tr2> Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA - - V 30 (BR)DSS GS D voltage V I = 1mA Breakdown voltage (BR)DSS D - - mV/C 25 temperature coefficient T referenced to 25C j I Zero gate voltage drain current V = 30V, V = 0V - - 1 A DSS DS GS I V = 20V, V = 0V Gate - Source leakage current - - 10 A GSS GS DS Gate threshold voltage V V = 10V, I = 1mA - V 1.0 2.5 GS (th) DS D V Gate threshold voltage I = 1mA (GS)th D - 3.9 - mV/C temperature coefficient T referenced to 25C j V = 10V, I = 3A - 55 75 GS D V = 4.5V, I = 1.5A - 85 115 GS D Static drain - source *5 R m DS(on) on - state resistance V = 4.0V, I = 1.5A - 95 125 GS D V = 10V, I = 3A, T =125C - 95 125 GS D j R Gate input resistannce f = 1MHz, open drain - 24 - G *5 V = 10V, I = 3A Transconductance g 2.4 5.0 - S fs DS D *1 Limited only by maximum temperature allowed. *2 Pw 10 s, Duty cycle 1% *3 Mounted on a ceramic board (30300.8mm) *4 Mounted on a FR4 (15200.8mm) *5 Pulsed www.rohm.com 2016.06 - Rev.B 2012 ROHM Co., Ltd. All rights reserved. 2012.09 - Rev.B 2/11