X-On Electronics has gained recognition as a prominent supplier of RSR030N06FRATL MOSFETs across the USA, India, Europe, Australia, and various other global locations. RSR030N06FRATL MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

RSR030N06FRATL ROHM

RSR030N06FRATL electronic component of ROHM
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Part No.RSR030N06FRATL
Manufacturer: ROHM
Category: MOSFETs
Description: MOSFET, AEC-Q101, N-CH, 60V, TSMT
Datasheet: RSR030N06FRATL Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
5: USD 0.633 ea
Line Total: USD 3.16 
Availability - 0
MOQ: 5  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Tue. 12 Nov to Mon. 18 Nov
MOQ : 5
Multiples : 1
5 : USD 0.633
25 : USD 0.4971
100 : USD 0.4144
250 : USD 0.3604
500 : USD 0.3308
1000 : USD 0.3104

   
Manufacturer
Product Category
Transistor Polarity
Brand
Continuous Drain Current Id
Drain Source Voltage Vds
On Resistance Rdson
Rdson Test Voltage Vgs
Threshold Voltage Vgs
Power Dissipation Pd
Transistor Case Style
No. Of Pins
Operating Temperature Max
Automotive Qualification Standard
Msl
Svhc
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We are delighted to provide the RSR030N06FRATL from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RSR030N06FRATL and other electronic components in the MOSFETs category and beyond.

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RSR030N06FRA Nch 60V 3A Power MOSFET Datasheet Outline V TSMT3 60V DSS (3) R (Max.) 85m DS(on) I (1) 3A D P 1W (2) D Features Inner circuit (1) Gate 1) Low on - resistance. (2) Source 2) Built-in G-S Protection Diode. (3) Drain 3) Small Surface Mount Package (TSMT3). 4) Pb-free lead plating RoHS compliant 1 ESD PROTECTION DIODE 5) AEC-Q101 Qualified 2 BODY DIODE Packaging specifications Packaging Taping Reel size (mm) 180 Application Tape width (mm) 8 DC/DC converters Type Basic ordering unit (pcs) 3,000 Taping code TL Marking PY Absolute maximum ratings(T = 25C) a Parameter Symbol Value Unit V Drain - Source voltage 60 V DSS *1 Continuous drain current I 3 A D *2 Pulsed drain current A I 12 D,pulse V Gate - Source voltage 20 V GSS *3 P 1.0 W D Power dissipation *4 0.54 W P D T Junction temperature 150 C j Range of storage temperature T C 55 to 150 stg www.rohm.com 2016.06 - Rev.B 2012 ROHM Co., Ltd. All rights reserved. 2012.06 - Rev.B 1/11Data Sheet RSR030N06FRA Thermal resistance Values Parameter Symbol Unit Min. Typ. Max. *3 Thermal resistance, junction - ambient R - - 125 C/W thJA *4 Thermal resistance, junction - ambient R - - 231 C/W thJA Electrical characteristics(T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 60 - - V (BR)DSS GS D voltage V I = 1mA Breakdown voltage (BR)DSS D - 67 - mV/C temperature coefficient T referenced to 25C j I V = 60V, V = 0V Zero gate voltage drain current - - 1 A DSS DS GS I Gate - Source leakage current V = 20V, V = 0V - - 10 A GSS GS DS V V = 10V, I = 1mA Gate threshold voltage 1.0 - 2.5 V GS (th) DS D V I = 1mA Gate threshold voltage (GS)th D - 4.4 - mV/C temperature coefficient T referenced to 25C j V =10V, I =3A - 60 85 GS D V =4.5V, I =3A - 70 100 GS D Static drain - source *5 R m DS(on) on - state resistance V =4.0V, I =3A - 75 105 GS D V =10V, I =3A, T =125C - 110 154 GS D j R Gate input resistannce f = 1MHz, open drain - 5 - G *5 V = 10V, I = 9A Transconductance 2.1 5.5 - S g DS D fs *1 Limited only by maximum temperature allowed. *2 Pw 10 s, Duty cycle 1% *3 Mounted on a ceramic board (30300.8mm) *4 Mounted on a FR4(12200.8mm) *5 Pulsed www.rohm.com 2016.06 - Rev.B 2012 ROHM Co., Ltd. All rights reserved. 2012.06 - Rev.B 2/11

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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