RSS060P05FRA RSS060P05 Transistor AEC-Q101 Qualified 4V Drive Pch MOSFET RSS060P05 RSS060P05FRA z Structure z Dimensions (Unit : mm) Silicon P-channel SOP8 MOSFET 5.0 1.75 0.4 ( ) ( ) 8 5 z Features 1) Built-in G-S Protection Diode. 2) Small and Surface Mount Package (SOP8). ( ) ( ) 1 4 0.2 1.27 1pin mark z Applications Each lead has same dimensions Power switching , DC / DC converter , Inverter z Packaging dimensions Package Taping Type Code TB Basic ordering unit (pieces) 2500 RSS060P05FRARSS060P05 z Absolute maximum ratings (Ta=25C) z Equivalent circuit (8) (7) (6) (5) Parameter Symbol Limits Unit Drain-source voltage V -45 V DSS Gate-source voltage V 20 V GSS Continuous I 6.0 A D Drain current 2 Pulsed I 24 A DP *1 1 (1) Source Continuous I -1.6 A Source current S (2) Source (3) Source (Body diode) Pulsed I -24 A SP *1 (4) Gate (5) Drain Total power dissipation P 2W D *2 (1) (2) (3) (4) (6 )Drain o Chanel temperature T 150 (7) Drain ch C 1 ESD PROTECTION DIODE (8) Drain 2 BODY DIODE o Range of Storage temperature T -55 to +150 stg C *1 PW 10 Duty cycle1% *2 Mounted on a ceramic board z Thermal resistance Parameter Symbol Limits Unit o Chanel to ambient R 62.5 th(ch-a) * C/W * Mounted on a ceramic board Rev.A 1/4 3.9 6.0 0.4Min.RSS060P05FRA RSS060P05 Transistor z Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage I 10 AV =20V, V =0V GSS GS DS Drain-source breakdown voltage V(BR) DSS 45 VID=1mA, VGS=0V Zero gate voltage drain current IDSS 1 AVDS=45V, VGS=0V Gate threshold voltage V 1.0 2.5 V V =10V, I =1mA GS (th) DS D 26 36 m ID=6A, VGS=10V Static drain-source on-state RDS (on) 35 49 m ID=6A, VGS=4.5V resistance 38 53 m ID=6A, VGS=4.0V Forward transfer admittance Y 8.0 SV =10V, I =6A fs DS D Input capacitance Ciss 2700 pF VDS=10V Output capacitance Coss 360 pF VGS=0V Reverse transfer capacitance C 230 pF f=1MHz rss Turn-on delay time t 25 ns VDD 25V d (on) ID=3.0A Rise time tr 28 ns VGS=10V Turn-off delay time td (off) 100 ns RL=8.3 Fall time t 28 ns RG=10 f Total gate charge Qg 23.0 32.2 nC VDD 25V VGS=5V Gate-source charge Qgs 6.6 nC ID=6.0A Gate-drain charge Qgd 8.0 nC RL=4.2 RG=10 Pulsed z Body diode characteristics (Source-Drain) Parameter Symbol Min. Typ. Max. Unit Conditions Forward voltage VSD 1.2 V IS=6A, VGS=0V Pulsed Rev.A 2/4