RSS065N03 Transistors 4V Drive Nch MOS FET RSS065N03 z Structure z External dimensions (Unit : mm) Silicon N-channel MOS FET SOP8 5.0 1.75 0.4 z Features ( ) ( ) 8 5 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (SOP8). ( ) ( ) 1 4 0.2 1.27 1pin mark z Applications Power switching, DC / DC converter. Each lead has same dimensions z Packaging specifications z Equivalent circuit (8) (7) (6) (5) (8) (7) (6) (5) Package Taping Type Code TB Basic ordering unit (pieces) 2500 2 RSS065N03 (1) (2) (3) (4) 1 (1)Source (2)Source (3)Source (4)Gate (5)Drain (1) (2) (3) (4) (6)Drain (7)Drain 1 ESD PROTECTION DIODE (8)Drain 2 BODY DIODE A protection diode is included between the gate and the source terminals to protect the diode against static electricity when the product is in use. Use the protection circuit when the fixed voltages are exceeded. z Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit Drain-source voltage VDSS 30 V Gate-source voltage VGSS 20 V Continuous I 6.5 A D Drain current 1 I Pulsed DP 26 A Continuous IS 1.6 A Source current 1 (Body diode) Pulsed ISP 6.4 A 2 Total power dissipation PD 2 W Tch 150 C Channel temperature Storage temperature Tstg 55 to +150 C 1 Pw10s, Duty cycle1% 2 Mounted on a ceramic board. z Thermal resistance Parameter Symbol Limits Unit Channel to ambient Rth (ch-a) 62.5 C / W Mounted on a ceramic board. Rev.A 1/3 3.9 6.0 0.4Min.RSS065N03 Transistors z Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage I 1 AV =20V, V =0V GSS GS DS Drain-source breakdown voltage V 30 VI =1mA, V =0V (BR) DSS D GS Zero gate voltage drain current IDSS 10 AVDS=30V, VGS=0V Gate threshold voltage VGS (th) 1.0 2.5 V VDS=10V, ID=1mA 19 27 I =6.5A, V =10V D GS Static drain-source on-starte RDS (on) 27 38 m ID=6.5A, VGS=4.5V resistance 30 42 ID=6.5A, VGS=4V Forward transfer admittance Y 4.0 SI =6.5A, V =10V fs D DS Input capacitance Ciss 430 pF VDS=10V Output capacitance Coss 155 pF VGS=0V Reverse transfer capacitance Crss 80 pF f=1MHz Turn-on delay time t 8 ns I =3.25A, V 15V d (on) D DD Rise time tr 8 ns VGS=10V Turn-off delay time td (off) 31 ns RL=4.62 Fall time t 8 ns R =10 f G Total gate charge Qg 6.1 8.6 nC VDD 15V Gate-source charge Qgs 1.5 nC VGS=5V Gate-drain charge Qgd2.3 nC ID=6.5A Pulsed z Body diode characteristics (Source-Drain) (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Forward voltage VSD 1.2 V IS=6.4A, VGS=0V Pulsed Rev.A 2/3