TPCP8203 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS) TPCP8203 Portable Equipment Applications Motor Drive Applications Unit: mm 0.330.05 DC/DC Converters M A 0.05 5 8 Lead (Pb)-free Small footprint due to small and thin package Low drain-source ON-resistance: R = 31 m (typ.) DS(ON) 0.475 1 4 High forward transfer admittance: Y = 8.6 S (typ.) fs B B 0.05 M 0.65 Low leakage current: I = 10 A (max)(V = 40 V) DSS DS 2.90.1 A Enhancement model: V = 1.3 to 2.5V th 0.80.05 (V = 10 V, I = 1 mA) S DS D 0.025 S +0.1 0.28 0.170.02 -0.11 Absolute Maximum Ratings (Ta = 25C) +0.13 1.12 -0.12 +0.13 Characteristic Symbol Rating Unit 1.12 -0.12 +0.1 Drain-source voltage V 40 V DSS 0.28 1Source1 5Drain2 -0.11 2Gate1 6 Drain2 Drain-gate voltage (R = 20 k) V 40 V GS DGR 3Source2 7 Drain1 Gate-source voltage V 20 V GSS 4Gate2 8Drain1 DC (Note 1) I 4.7 D JEDEC Drain current A Pulse (Note 1) I 18.8 DP JEITA Single-device operation P 1.48 D (1) Drain power TOSHIBA 2-3V1G (Note 3a) dissipation (t = 5 s) (Note 2a) Single-device value at Weight: 0.017 g (typ.) P 1.23 D (2) dual operation (Note 3b) W Single-device operation Circuit Configuration P 0.58 D (1) Drain power (Note 3a) dissipation Single-device value at (t = 5 s) (Note 2b) 8 7 6 5 P 0.36 D (2) dual operation (Note 3b) Single-pulse avalanche energy (Note 4) E 10.6 mJ AS Avalanche current I 4.7 A AR Repetitive avalanche energy Single-device value at dual operation E 0.12 mJ AR (Note 2a, 3b, 5) Channel temperature T 150 C ch Storage temperature range T 55 to 150 C stg 1 2 3 4 Marking (Note 6) Note: For Notes 1 to 6, see the next page. 8 7 6 5 This transistor is an electrostatic-sensitive device. Handle with care. 8203 1 2 3 4 Lot No. 1 2007-02-28 2.40.1 2.80.1TPCP8203 Thermal Characteristics Characteristic Symbol MaxUnit Single-device operation R 84.5 th (ch-a) (1) Thermal resistance, (Note 3a) channel to ambient C/W (t = 5 s) (Note 2a) Single-device value at R 101.6 th (ch-a) (2) dual operation (Note 3b) Single-device operation R 215.5 th (ch-a) (1) Thermal resistance, (Note 3a) channel to ambient C/W Single-device value at (t = 5 s) (Note 2b) R 347.2 th (ch-a) (2) dual operation (Note 3b) Note 1: Ensure that the channel temperature does not exceed 150C. Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b) 25.4 FR-4 FR-4 25.4 25.4 0.8 25.4 25.4 0.8 (Unit: mm) (Unit: mm) (a) (b) Note 3: a) The power dissipation and thermal resistance values shown are for a single device. (During single-device operation, power is applied to one device only.) b) The power dissipation and thermal resistance values shown are for a single device. (During dual operation, power is applied to both devices evenly.). Note 4: V = 25 V, T = 25C (initial), L = 0.5 mH, R = 25 , I = 4.7 A DD ch G AR Note 5: Repetitive rating: Pulse width limited by Max. Channel temperature. Note 6: on the lower left of the marking indicates Pin 1. * Weekly code (3 digits): Week of manufacture (01 for the first week of the year, continuing up to 52 or 53) Year of manufacture (The last digit of the calendar year) Note 7: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 2 2007-02-28 25.4