TPCP8407 MOSFETs Silicon P-/N-Channel MOS (U-MOS /U-MOS ) TPCP8407TPCP8407TPCP8407TPCP8407 1. 1. ApplicationsApplications 1. 1. ApplicationsApplications Motor Drivers Mobile Equipment 2. 2. 2. 2. FeaturesFeaturesFeaturesFeatures (1) AEC-Q101 qualified (2) Small, thin package (3) Low gate charge N-channel MOSFET: Q = 4.7 nC (typ.) SW P-channel MOSFET: Q = 5.5 nC (typ.) SW (4) Low drain-source on-resistance N-channel MOSFET: R = 29.1 m (typ.) (V = 10 V) DS(ON) GS P-channel MOSFET: R = 43.7 m (typ.) (V = -10V) DS(ON) GS (5) Low leakage current N-channel MOSFET: I = 10 A (max) (V = 40 V) DSS DS P-channel MOSFET: I = -10 A (max) (V = -40 V) DSS DS (6) Enhancement mode N-channel MOSFET: V = 2 to 3 V (V = 10 V, I = 1 mA) th DS D P-channel MOSFET: V = -2 to -3 V (V = -10 V, I = -1 mA) th DS D 3. 3. Packaging and Internal CircuitPackaging and Internal Circuit 3. 3. Packaging and Internal CircuitPackaging and Internal Circuit 1: Source (N-channel) 2: Gate (N-channel) 3: Source (P-channel) 4: Gate (P-channel) 5, 6: Drain (P-channel) 7, 8: Drain (N-channel) PS-8 Start of commercial production 2013-05 2016 Toshiba Corporation 2016-02-24 1 Rev.4.0TPCP8407 4. 4. 4. 4. Absolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (T = 25 = 25 = 25 = 25 unless otherwise specified) unless otherwise specified) unless otherwise specified) unless otherwise specified) aaaa 4.1. 4.1. N-Channel MOSFETN-Channel MOSFET 4.1. 4.1. N-Channel MOSFETN-Channel MOSFET Characteristics Symbol Rating Unit Drain-source voltage V 40 V DSS Gate-source voltage V 20 GSS Drain current (DC) (Note 1) I 5 A D Drain current (pulsed) (Note 1) I 20 DP Power dissipation (single operation) (t = 5 s) (Note 2), (Note 4) P 1.77 W D(1) Power dissipation (per device for dual operation) (t = 5 s) (Note 2), (Note 5) P 1.47 D(2) Power dissipation (single operation) (t = 5 s) (Note 3), (Note 4) P 0.69 D(1) Power dissipation (per device for dual operation) (t = 5 s) (Note 3), (Note 5) P 0.43 D(2) Single-pulse avalanche energy (Note 6) E 33.2 mJ AS Avalanche current I 5 A AR Channel temperature (Note 7) T 175 ch Storage temperature (Note 7) T -55 to 175 stg 4.2. 4.2. 4.2. 4.2. P-Channel MOSFETP-Channel MOSFETP-Channel MOSFETP-Channel MOSFET Characteristics Symbol Rating Unit Drain-source voltage V -40 V DSS Gate-source voltage V -20/+10 GSS Drain current (DC) (Note 1) I -4 A D Drain current (pulsed) (Note 1) I -16 DP Power dissipation (single operation) (t = 5 s) (Note 2), (Note 4) P 1.77 W D(1) Power dissipation (per device for dual operation) (t = 5 s) (Note 2), (Note 5) P 1.47 D(2) Power dissipation (single operation) (t = 5 s) (Note 3), (Note 4) P 0.69 D(1) Power dissipation (per device for dual operation) (t = 5 s) (Note 3), (Note 5) P 0.43 D(2) Single-pulse avalanche energy (Note 6) E 46.2 mJ AS Avalanche current I -4 A AR Channel temperature (Note 7) T 175 ch Storage temperature (Note 7) T -55 to 175 stg Note : Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 2016 Toshiba Corporation 2016-02-24 2 Rev.4.0