TPCP8901 TOSHIBA Transistor Silicon NPN / PNP Epitaxial Type (PCT Process) TPCP8901 Portable Equipment Applications Unit: mm Switching Applications 0.330.05 A 0.05 M 8 5 Small footprint due to small and thin package High DC current gain : PNP h = 200 to 500 (I = 0.1 A) FE C :NPN h = 400 to 1000 (I = 0.1 A) FE C 1 4 0.475 B 0.05 M B Low collector-emitter saturation : PNP V = 0.20 V (max) 0.65 CE (sat) 2.90.1 A : NPN V = 0.17 V (max) CE (sat) 0.80.05 High-speed switching : PNP t = 70 ns (typ.) f 0.025 S : NPN t = 85 ns (typ.) f +0.1 S 0.28 0.170.02 -0.11 +0.13 1.12 -0.12 Absolute Maximum Ratings (Ta = 25C) +0.13 1.12 -0.12 Rating Characteristics Symbol Unit +0.1 PNP NPN 0.28 -0.11 1.Emitter1 5.Collector2 2.Base1 6.Collector2 Collector-base voltage V 50 100 V 3.Emitter2 7.Collector1 CBO 8.Collector1 4.Base2 Collector-emitter voltage V 50 50 V CEO JEDEC Emitter-base voltage V 7 7 V EBO JEITA DC (Note 1) I 0.8 1.0 C Collector current A Pulse (Note 1 ) I 5.0 5.0 TOSHIBA 2-3V1C CP Weight: 0.017 g (typ.) Base current I 100 100 mA B Single-device 1.48 operation Collector power P (Note 2) W C Single-device dissipation (t = 10s) value at dual 0.80 operation Single-device 0.83 operation Collector power P (Note 2) W C Single-device dissipation (DC) value at dual 0.48 operation Junction temperature T 150 C j Storage temperature range T 55 to 150 C stg Note 1: Please use devices on condition that the junction temperature is below 150 . Icp= 5A ( t100s) 2 Note 2: Mounted on FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm ) Note 3: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Start of commercial production 2004-01 1 2013-11-01 2.40.1 2.80.1TPCP8901 Figure 1. Circuit configuration (top view) Figure 2. Marking (Note 4) 8 7 6 5 8 7 6 5 Q2 8901 Type Q1 1 2 3 4 1 2 3 4 Note 4: on lower left on the marking indicates Pin 1. Weekly code: (Three digits) Lot No. (Weekly code) Week of manufacture (01 for first week of year, continues up to 52 or 53) Year of manufacture (One low-order digits of calendar year) Electrical Characteristics (Ta = 25C) PNP Characteristics Symbol Test Condition Min Typ. MaxUnit Collector cut-off current I V = 50 V, I = 0 100 nA CBO CB E Emitter cut-off current I V = 7 V, I = 0 100 nA EBO EB C Collector-emitter breakdown voltage V I = 10 mA, I = 0 50 V (BR) CEO C B h (1) V = 2 V, I = 0.1 A 200 500 FE CE C DC current gain h (2) V = 2 V, I = 0.3 A 125 FE CE C Collector-emitter saturation voltage V I = 0.3 A, I = 0.01 A 0.20 V CE (sat) C B Base-emitter saturation voltage V I = 0.3 A, I = 0.01 A 1.10 V BE (sat) C B Collector output capacitance C V = 10 V, I = 0, f = 1MHz 8 pF ob CB E Rise time t 60 r See Figure 3 circuit diagram Switching time Storage time t V 30 V, R = 100 280 ns CC L stg I = I = 10 mA B1 B2 Fall time t 70 f NPN Characteristics Symbol Test Condition Min Typ. MaxUnit Collector cut-off current I V = 100 V, I = 0 100 nA CBO CB E Emitter cut-off current I V = 7 V, I = 0 100 nA EBO EB C Collector-emitter breakdown voltage V I = 10 mA, I = 0 50 V (BR) CEO C B h (1) V = 2 V, I = 0.1 A 400 1000 FE CE C DC current gain h (2) V = 2 V, I = 0.3 A 200 FE CE C Collector-emitter saturation voltage V I = 300 mA, I = 6 mA 0.17 V CE (sat) C B Base-emitter saturation voltage V I = 300 mA, I = 6 mA 1.10 V BE (sat) C B Collector output capacitance C V = 10 V, I = 0, f = 1MHz 5 pF ob CB E Rise time t 35 r See Figure 4 circuit diagram Switching time Storage time t V 30 V, R = 100 680 ns CC L stg I = I = 10 mA B1 B2 Fall time t 85 f 2 2013-11-01