X-On Electronics has gained recognition as a prominent supplier of TPH1500CNH,L1Q MOSFETs across the USA, India, Europe, Australia, and various other global locations. TPH1500CNH,L1Q MOSFETs are a product manufactured by Toshiba. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

TPH1500CNH,L1Q Toshiba

TPH1500CNH,L1Q electronic component of Toshiba
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Part No.TPH1500CNH,L1Q
Manufacturer: Toshiba
Category: MOSFETs
Description: MOSFET TSON-ADV 00 PD=78W 1MHz PWR MOSFET TRNS
Datasheet: TPH1500CNH,L1Q Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 4.3875 ea
Line Total: USD 4.39 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 08 Nov to Thu. 14 Nov
MOQ : 5000
Multiples : 1
5000 : USD 1.4312
6000 : USD 1.4169
10000 : USD 1.4027
15000 : USD 1.3887
20000 : USD 1.3747
25000 : USD 1.287
30000 : USD 1.2741
50000 : USD 1.2614
100000 : USD 1.2488

0
Ship by Thu. 14 Nov to Mon. 18 Nov
MOQ : 1
Multiples : 1
1 : USD 4.3875
10 : USD 1.5502
100 : USD 1.17
500 : USD 0.9822
1000 : USD 0.8334
2500 : USD 0.8087
5000 : USD 0.7615

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Transistor Type
Brand
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the TPH1500CNH,L1Q from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TPH1500CNH,L1Q and other electronic components in the MOSFETs category and beyond.

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TPH1500CNH MOSFETs Silicon N-channel MOS (U-MOS-H) TPH1500CNHTPH1500CNHTPH1500CNHTPH1500CNH 1. 1. ApplicationsApplications 1. 1. ApplicationsApplications High-Efficiency DC-DC Converters Switching Voltage Regulators 2. 2. 2. 2. FeaturesFeaturesFeaturesFeatures (1) High-speed switching (2) Small gate charge: Q = 8.2 nC (typ.) SW (3) Low drain-source on-resistance: R = 13 m (typ.) (V = 10 V) DS(ON) GS (4) Low leakage current: I = 10 A (max) (V = 150 V) DSS DS (5) Enhancement mode: V = 2.0 to 4.0 V (V = 10 V, I = 1.0 mA) th DS D 3. 3. Packaging and Internal CircuitPackaging and Internal Circuit 3. 3. Packaging and Internal CircuitPackaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain SOP Advance 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain SOP Advance(N) The package can be selected according to your preference. For details, please contact your TOSHIBA sales representative. Start of commercial production 2014-12 2019 2019-10-17 1 Toshiba Electronic Devices & Storage Corporation Rev.6.0TPH1500CNH 4. 4. 4. 4. Absolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (T = 25 = 25 = 25 = 25 unless otherwise specified) unless otherwise specified) unless otherwise specified) unless otherwise specified) aaaa Characteristics Symbol Rating Unit Drain-source voltage V 150 V DSS Gate-source voltage V 20 GSS Drain current (DC) (Silicon limit) (Note 1), (Note 2) I 50 A D Drain current (DC) (Continuous) (Note 1) I 38 D Drain current (pulsed) (t = 1 ms) (Note 1) I 148 DP Power dissipation (T = 25 ) P 78 W c D Power dissipation (t = 10 s) (Note 3) P 2.8 D Power dissipation (t = 10 s) (Note 4) P 1.6 D Single-pulse avalanche energy (Note 5) E 198 mJ AS Avalanche current I 38 A AR Channel temperature T 150 ch Storage temperature T -55 to 150 stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 5. 5. Thermal CharacteristicsThermal Characteristics 5. 5. Thermal CharacteristicsThermal Characteristics Characteristics Symbol Max Unit Channel-to-case thermal resistance (T = 25 ) R 1.60 /W c th(ch-c) Channel-to-ambient thermal resistance (t = 10 s) (Note 3) R 44.6 th(ch-a) Channel-to-ambient thermal resistance (t = 10 s) (Note 4) R 78.1 th(ch-a) Note 1: Ensure that the channel temperature does not exceed 150 . Note 2: Limited by silicon chip capability. Note 3: Device mounted on a glass-epoxy board (a), Figure 5.1 Note 4: Device mounted on a glass-epoxy board (b), Figure 5.2 Note 5: V = 60 V, T = 25 (initial), L = 190 H, I = 38 A DD ch AR Fig. Fig. Fig. Fig. 5.15.15.15.1 Device Mounted on a Glass-Epoxy Device Mounted on a Glass-Epoxy Device Mounted on a Glass-Epoxy Device Mounted on a Glass-Epoxy Fig. Fig. Fig. Fig. 5.25.25.25.2 Device Mounted on a Glass-Epoxy Device Mounted on a Glass-Epoxy Device Mounted on a Glass-Epoxy Device Mounted on a Glass-Epoxy Board (a)Board (a)Board (a)Board (a) Board (b)Board (b)Board (b)Board (b) Note: This transistor is sensitive to electrostatic discharge and should be handled with care. 2019 2019-10-17 2 Toshiba Electronic Devices & Storage Corporation Rev.6.0

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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