TPC8407 MOSFETs Silicon P-/N-Channel MOS (U-MOS/U-MOS-H) TPC8407TPC8407TPC8407TPC8407 1. 1. 1. 1. ApplicationsApplicationsApplicationsApplications Motor Drivers CCFL Inverters Mobile Equipments 2. 2. FeaturesFeatures 2. 2. FeaturesFeatures (1) Small footprint due to a small and thin package (2) High speed switching (3) Low drain-source on-resistance P-channel R = 18 m (typ.) (V = -10 V), DS(ON) GS N-channel R = 14 m (typ.) (V = 10 V) DS(ON) GS (4) Low leakage current P-channel I = -10 A (V = -30 V), DSS DS N-channel I = 10 A (V = 30 V) DSS DS (5) Enhancement mode P-channel V = -0.8 to -2.0 V (V = -10 V, I = -0.2 mA), th DS D N-channel V = 1.3 to 2.3 V (V = 10 V, I = 0.1 mA) th DS D 3. 3. 3. 3. Packaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal Circuit 1: Source 1 2: Gate 1 3: Source 2 4: Gate 2 5, 6: Drain 2 7, 8: Drain 1 SOP-8 Start of commercial production 2011-03 2014-01-07 1 Rev.2.0TPC8407 4. 4. 4. 4. Absolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (T = 25 = 25 = 25 = 25 unless otherwise specified) unless otherwise specified) unless otherwise specified) unless otherwise specified) aaaa Characteristics P/N Symbol Rating Unit Drain-source voltage P-ch V -30 V DSS N-ch 30 Gate-source voltage P-ch V 20 GSS N-ch 20 Drain current (DC) (Note 1) P-ch I -7.4 A D N-ch 9 Drain current (pulsed) (Note 1) P-ch I -29.6 A DP N-ch 36 Power dissipation (single operation) (t = 10 s) (Note 2), (Note 4) P-ch P 1.5 W D(1) N-ch 1.5 Power dissipation (per device for dual (t = 10 s) (Note 2), (Note 5) P-ch P 1.1 W D(2) operation) N-ch 1.1 Power dissipation (single operation) (t = 10 s) (Note 3), (Note 4) P-ch P 0.75 W D(1) N-ch 0.75 Power dissipation (per device for dual (t = 10 s) (Note 3), (Note 5) P-ch P 0.45 W D(2) operation) N-ch 0.45 Single-pulse avalanche energy (Note 6) P-ch E 35 mJ AS N-ch 52 Avalanche current P-ch I -7.4 A AR N-ch 9 Channel temperature P-ch T 150 ch N-ch 150 Storage temperature P-ch T -55 to 150 stg N-ch -55 to 150 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 2014-01-07 2 Rev.2.0