X-On Electronics has gained recognition as a prominent supplier of RSE002P03TL MOSFETs across the USA, India, Europe, Australia, and various other global locations. RSE002P03TL MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

RSE002P03TL ROHM

RSE002P03TL electronic component of ROHM
RSE002P03TL ROHM
RSE002P03TL MOSFETs
RSE002P03TL  Semiconductors

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See Product Specifications
Part No. RSE002P03TL
Manufacturer: ROHM
Category: MOSFETs
Description: MOSFET P-CH 30V 200MA SOT416
Datasheet: RSE002P03TL Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.5951 ea
Line Total: USD 0.6 
Availability - 447
Ship by Mon. 13 Jan to Wed. 15 Jan
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
447
Ship by Mon. 13 Jan to Wed. 15 Jan
MOQ : 1
Multiples : 1
1 : USD 0.5951
10 : USD 0.3927
100 : USD 0.2541
500 : USD 0.2002
1000 : USD 0.1826
3000 : USD 0.176
9000 : USD 0.1749
24000 : USD 0.1738

2661
Ship by Wed. 15 Jan to Tue. 21 Jan
MOQ : 230
Multiples : 1
230 : USD 0.5313

2910
Ship by Wed. 15 Jan to Tue. 21 Jan
MOQ : 230
Multiples : 1
230 : USD 0.4628
250 : USD 0.4442
500 : USD 0.4282
1000 : USD 0.4142
2500 : USD 0.402

5727
Ship by Wed. 15 Jan to Tue. 21 Jan
MOQ : 154
Multiples : 1
154 : USD 0.4225
165 : USD 0.3933
200 : USD 0.3592
500 : USD 0.3055
1000 : USD 0.2487
2000 : USD 0.2324

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Pd - Power Dissipation
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Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Series
Transistor Type
Type
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Typical Turn-On Delay Time
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We are delighted to provide the RSE002P03TL from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RSE002P03TL and other electronic components in the MOSFETs category and beyond.

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RSE002P03 Datasheet 4V Dirve Pch MOSFET llOutline EMT3 V -30V DSS R (Max.) 1.4 DS(on) I 0.2A D P 0.15W D llInner circuit llFeatures 1) Low on-resistance. 2) Small package(EMT3) 3) 4V drive 4) Lead Free/RoHS Compliant. llPackaging specifications Embossed Packing Tape Reel size (mm) 180 llApplication Tape width (mm) 8 Type Switching Basic ordering unit (pcs) 3000 Taping code TL Marking WP llAbsolute maximum ratings (T = 25C) a Parameter Symbol Value Unit V Drain - Source voltage -30 V DSS I Continuous drain current 0.2 A D *1 Pulsed drain current I 0.4 A D,pulse V Gate - Source voltage 20 V GSS *2 Power dissipation P 0.15 W D T Junction temperature 150 j Range of storage temperature T -55 to +150 stg llThermal resistance Parameter Symbol Value Unit *2 junction - ambient 833 /W Rth(ch-a) www.rohm.com 1/7 2014 ROHM Co., Ltd. All rights reserved. 20131001 - Rev.003 Not Recommended for New Designs RSE002P03 Datasheet llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = -1mA -30 - - V (BR)DSS GS D voltage Zero gate voltage I V = -30V, V = 0V - - -1 A DSS DS GS drain current I Gate - Source leakage current V = 20V, V = 0V - - 10 A GSS GS DS V V = -10V, I = -1mA Gate threshold voltage -1.0 - -2.5 V GS(th) DS D V = -10V, I = -0.2A - 0.9 1.4 GS D Static drain - source *3 R V = -4.5V, I = -0.15A - 1.4 2.1 DS(on) GS D on - state resistance V = -4.0V, I = -0.15A - 1.6 2.4 GS D *3 g V = -10V, I = -0.15A Transconductance 0.2 - - S fs DS D C Input capacitance V = 0V - 30 - iss GS C V = -10V Output capacitance - 4 - pF oss DS C f = 1MHz Reverse transfer capacitance - 5 - rss *3 t V -15V, V = -10V Turn - on delay time - 8 - d(on) DD GS *3 t Rise time I = 0.15A - 5 - r D ns *3 t R = 100 Turn - off delay time - 30 - d(off) L *3 t R = 10 Fall time - 40 - f G llBody diode electirical characteristics (Source-Drain) (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. *3 Forward voltage V = 0V, I = -0.1A - - -1.2 V V GS S SD *1 Pw 10s, Duty cycle 1% *2 Each teminal mounted on a recommended land *3 Pulsed www.rohm.com 2/7 20131001 - Rev.003 2014 ROHM Co., Ltd. All rights reserved. Not Recommended for New Designs

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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