X-On Electronics has gained recognition as a prominent supplier of RSF015N06TL MOSFETs across the USA, India, Europe, Australia, and various other global locations. RSF015N06TL MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

RSF015N06TL ROHM

RSF015N06TL electronic component of ROHM
RSF015N06TL ROHM
RSF015N06TL MOSFETs
RSF015N06TL  Semiconductors

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See Product Specifications
Part No. RSF015N06TL
Manufacturer: ROHM
Category: MOSFETs
Description: N-Channel 60 V 1.5A (Ta) 800mW (Ta) Surface Mount TUMT3
Datasheet: RSF015N06TL Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.57 ea
Line Total: USD 0.57 
Availability - 12512
Ship by Mon. 27 Jan to Wed. 29 Jan
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
12512
Ship by Mon. 27 Jan to Wed. 29 Jan
MOQ : 1
Multiples : 1
1 : USD 0.57
10 : USD 0.3487
100 : USD 0.2323
500 : USD 0.1782
1000 : USD 0.1562
3000 : USD 0.1353
9000 : USD 0.132
45000 : USD 0.1287

6079
Ship by Wed. 29 Jan to Tue. 04 Feb
MOQ : 156
Multiples : 1
156 : USD 0.4177
213 : USD 0.3055
214 : USD 0.304
500 : USD 0.2357
1000 : USD 0.2032
3000 : USD 0.1781

4700
Ship by Wed. 29 Jan to Tue. 04 Feb
MOQ : 230
Multiples : 1
230 : USD 0.688
500 : USD 0.4369

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Series
Transistor Type
Brand
Configuration
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the RSF015N06TL from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RSF015N06TL and other electronic components in the MOSFETs category and beyond.

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RSF015N06 Datasheet 4V Drive Nch MOSFET llOutline SOT-323T V 60V DSS TUMT3 R (Max.) 290m DS(on) I 1.5A D P 0.8W D llInner circuit llFeatures 1) Built-in G-S protection diode 2) Small surface mount package (TUMT3). 3) Low voltage drive(4V) llPackaging specifications Embossed Packing Tape Reel size (mm) 180 llApplication Tape width (mm) 8 Type Switching Basic ordering unit (pcs) 3000 Taping code TL Marking PX llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V 60 V DSS I Continuous drain current 1.5 A D *1 I Pulsed drain current 6.0 A DP V Gate - Source voltage 20 V GSS *2 P 0.8 W D Power dissipation *3 P 0.75 W D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 1/11 2016 ROHM Co., Ltd. All rights reserved. 20160630 - Rev.001 RSF015N06 Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *2 R - - 156 /W thJA Thermal resistance, junction - ambient *3 R - - 167 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 60 - - V (BR)DSS GS D voltage V I = 1mA (BR)DSS D Breakdown voltage - 63.7 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = 60V, V = 0V - - 1 A DSS DS GS drain current I V = 20V, V = 0V Gate - Source leakage current - - 10 A GSS GS DS V Gate threshold voltage V = 10V, I = 1mA 1.0 - 2.5 V GS(th) DS D V I = 1mA GS(th) D Gate threshold voltage - -2.8 - mV/ temperature coefficient T referenced to 25 j V = 10V, I = 1.5A - 210 290 GS D Static drain - source *4 R V = 4.5V, I = 1.5A - 240 330 m DS(on) GS D on - state resistance V = 4.0V, I = 1.5A - 255 350 GS D R Gate resistance f = 1MHz, open drain - 6.6 - G Forward Transfer *4 Y V = 10V, I = 1.5A 1.0 - - S fs DS D Admittance *1 Pw10s , Duty cycle 1% *2 Mounted on a ceramic board (30300.8mm) 2 *3 Mounted on a FR4 (25250.8mm,Cu pad:625mm ) *4 Pulsed www.rohm.com 2/11 20160630 - Rev.001 2016 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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