RSH065N06GZETB ROHM

4V Drive Nch MOSFET RSH065N06 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET SOP8 Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (SOP8). Application Switching Each lead has same dimensions Packaging specifications Inner circuit (8) (7) (6) (5) (8) (7) (6) (5) Package Taping Type Code TB Basic ordering unit (pieces) 2500 RSH065N06 2 (1) (2) (3) (4) 1 (1)Source (2)Source Absolute maximum ratings (Ta=25C) (3)Source Parameter Symbol Limits Unit (4)Gate (5)Drain (1) (2) (3) (4) Drain-source voltage VDSS 60 V (6)Drain (7)Drain Gate-source voltage VGSS 20 V 1 ESD PROTECTION DIODE (8)Drain 2 BODY DIODE 6.5 Continuous ID A Drain current A protection diode is included between the gate and 1 Pulsed IDP 26 A the source terminals to protect the diode against static electricity when the product is in use. Use the protection Source current Continuous IS 1.6 A circuit when the fixed voltages are exceeded. 1 (Body diode) Pulsed ISP 26 A 2 Total power dissipatino PD 2.0 W Channel temperature Tch 150 C Range of storage temperature Tstg 55 to +150 C 1 Pw10s, Duty cycle1% 2 Mounted on a ceramic board. Thermal resistance Parameter Symbol Limits Unit Channel to ambient Rth (ch-A) 62.5 C / W Mounted on a ceramic board. www.rohm.com 2009.12 - Rev.A 1/4 c 2009 ROHM Co., Ltd. All rights reserved. RSH065N06 Data Sheet Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS 10 AVGS=20V, VDS=0V Drain-source breakdown voltage V(BR) DSS 60 VID=1mA, VGS=0V Zero gate voltage drain current I 1 AV =60V, V =0V DSS DS GS Gate threshold voltage VGS (th) 1.0 2.5 V VDS=10V, ID=1mA 24 37 ID=6.5A, VGS=10V Static drain-source on-state R 28 44 m I =6.5A, V =4.5V DS (on) D GS resistance 31 48 ID=6.5A, VGS=4.0V Forward transfer admittance Yfs 4 SID=6.5A, VDS=10V Input capacitance C 900 pF V =10V iss DS Output capacitance Coss 200 pF VGS=0V Reverse transfer capacitance Crss 100 pF f=1MHz Turn-on delay time t 13 ns I =3.3A, V 30V d (on) D DD Rise time tr 25 ns VGS=10V Turn-off delay time td (off) 60 ns RL=9.1 Fall time t 20 ns R =10 f G Total gate charge Qg 11 16 nC ID=6.5A, V 30V DD Gate-source charge Qgs 2 nC VGS=5V R =4.6, R =10 Gate-drain charge Q 4 nC L G gd Pulsed Body diode characteristics (Source-Drain) (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Forward voltage VSD 1.2 V IS=1.6A, VGS=0V Pulsed www.rohm.com 2009.12 - Rev.A 2/4 c 2009 ROHM Co., Ltd. All rights reserved.