X-On Electronics has gained recognition as a prominent supplier of RSH065N06TB1 MOSFETs across the USA, India, Europe, Australia, and various other global locations. RSH065N06TB1 MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

RSH065N06TB1 ROHM

RSH065N06TB1 electronic component of ROHM
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See Product Specifications
Part No.RSH065N06TB1
Manufacturer: ROHM
Category: MOSFETs
Description: MOSFET Nch 60V 6.5A MOSFET
Datasheet: RSH065N06TB1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.2995 ea
Line Total: USD 1.3 
Availability - 1874
Ship by Mon. 18 Nov to Wed. 20 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1874
Ship by Mon. 18 Nov to Wed. 20 Nov
MOQ : 1
Multiples : 1
1 : USD 1.2995
10 : USD 1.0522
100 : USD 0.7946
500 : USD 0.6578
1000 : USD 0.6095
2500 : USD 0.583
25000 : USD 0.5819

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Forward Transconductance - Min
Power Dissipation
Rds On
Factory Pack Quantity :
Series
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the RSH065N06TB1 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RSH065N06TB1 and other electronic components in the MOSFETs category and beyond.

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4V Drive Nch MOSFET RSH065N06 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET SOP8 Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (SOP8). Application Switching Each lead has same dimensions Packaging specifications Inner circuit (8) (7) (6) (5) (8) (7) (6) (5) Package Taping Type Code TB Basic ordering unit (pieces) 2500 RSH065N06 2 (1) (2) (3) (4) 1 (1)Source (2)Source Absolute maximum ratings (Ta=25C) (3)Source Parameter Symbol Limits Unit (4)Gate (5)Drain (1) (2) (3) (4) Drain-source voltage VDSS 60 V (6)Drain (7)Drain Gate-source voltage VGSS 20 V 1 ESD PROTECTION DIODE (8)Drain 2 BODY DIODE 6.5 Continuous ID A Drain current A protection diode is included between the gate and 1 Pulsed IDP 26 A the source terminals to protect the diode against static electricity when the product is in use. Use the protection Source current Continuous IS 1.6 A circuit when the fixed voltages are exceeded. 1 (Body diode) Pulsed ISP 26 A 2 Total power dissipatino PD 2.0 W Channel temperature Tch 150 C Range of storage temperature Tstg 55 to +150 C 1 Pw10s, Duty cycle1% 2 Mounted on a ceramic board. Thermal resistance Parameter Symbol Limits Unit Channel to ambient Rth (ch-A) 62.5 C / W Mounted on a ceramic board. www.rohm.com 2009.12 - Rev.A 1/4 c 2009 ROHM Co., Ltd. All rights reserved. RSH065N06 Data Sheet Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS 10 AVGS=20V, VDS=0V Drain-source breakdown voltage V(BR) DSS 60 VID=1mA, VGS=0V Zero gate voltage drain current I 1 AV =60V, V =0V DSS DS GS Gate threshold voltage VGS (th) 1.0 2.5 V VDS=10V, ID=1mA 24 37 ID=6.5A, VGS=10V Static drain-source on-state R 28 44 m I =6.5A, V =4.5V DS (on) D GS resistance 31 48 ID=6.5A, VGS=4.0V Forward transfer admittance Yfs 4 SID=6.5A, VDS=10V Input capacitance C 900 pF V =10V iss DS Output capacitance Coss 200 pF VGS=0V Reverse transfer capacitance Crss 100 pF f=1MHz Turn-on delay time t 13 ns I =3.3A, V 30V d (on) D DD Rise time tr 25 ns VGS=10V Turn-off delay time td (off) 60 ns RL=9.1 Fall time t 20 ns R =10 f G Total gate charge Qg 11 16 nC ID=6.5A, V 30V DD Gate-source charge Qgs 2 nC VGS=5V R =4.6, R =10 Gate-drain charge Q 4 nC L G gd Pulsed Body diode characteristics (Source-Drain) (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Forward voltage VSD 1.2 V IS=1.6A, VGS=0V Pulsed www.rohm.com 2009.12 - Rev.A 2/4 c 2009 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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