Ordering number : ENA1430B ECH8310 P-Channel Power MOSFET ECH8310 Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Drain-to-Source Breakdown Voltage V I =--1mA, V =0V --30 V (BR)DSS D GS Zero-Gate Voltage Drain Current I V =--30V, V =0V --1 A DSS DS GS Gate-to-Source Leakage Current I V =16V, V =0V 10 A GSS GS DS Cutoff Voltage V (off) V =--10V, I =--1mA --1.2 --2.6 V GS DS D Forward Transfer Admittance yfs V =--10V, I =--4.5A 12 S DS D R (on)1 I =--4.5A, V =--10V 9 13 17 m DS D GS Static Drain-to-Source On-State Resistance R (on)2 I =--2A, V =--4.5V 12 20 28 m DS D GS R (on)3 I =--2A, V =--4.0V 13.5 23 32.5 m DS D GS Input Capacitance Ciss 1400 pF Output Capacitance Coss V =--10V, f=1MHz 350 pF DS Reverse Transfer Capacitance Crss 250 pF Turn-ON Delay Time t (on) 10 ns d Rise Time t 45 ns r See specified Test Circuit. Turn-OFF Delay Time t (off) 134 ns d Fall Time t 87 ns f Total Gate Charge Qg 28 nC Gate-to-Source Charge Qgs V =--15V, V =--10V, I =--9A 4 nC DS GS D Gate-to-Drain Miller Charge Qgd 6 nC Diode Forward Voltage V I =--9A, V =0V --0.8 --1.2 V SD S GS Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Switching Time Test Circuit V = --15V V IN DD 0V --10V I = --4.5A D V IN R =3.3 L D V OUT PW=10s D.C.1% G ECH8310 P.G 50 S Ordering Information Device Package Shipping memo ECH8310-TL-H ECH8 3,000pcs./reel Pb Free and Halogen Free No. A1430-2/5