Ordering number : ENA0935A ECH8652 P-Channel Power MOSFET ECH8652 Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Drain-to-Source Breakdown Voltage V I =--1mA, V =0V --12 V (BR)DSS D GS I 1V =--8V, V =0V --1 A DSS DS GS Zero-Gate Voltage Drain Current I 2V =--12V, V =0V --10 A DSS DS GS Gate-to-Source Leakage Current I V =8V, V =0V 10 A GSS GS DS Cutoff Voltage V (off) V =--6V, I =--1mA --0.4 --1.4 V GS DS D Forward Transfer Admittance yfs V =--6V, I =--3A 6.6 11 S DS D R (on)1 I =--3A, V =--4.5V 21 28 m DS D GS Static Drain-to-Source On-State Resistance R (on)2 I =--1.5A, V =--2.5V 31 45 m DS D GS R (on)3 I =--0.5A, V =--1.8V 49 78 m DS D GS Input Capacitance Ciss 1000 pF Output Capacitance Coss V =--6V, f=1MHz 320 pF DS Reverse Transfer Capacitance Crss 250 pF Turn-ON Delay Time t (on) 11 ns d Rise Time t 72 ns r See speci ed Test Circuit. Turn-OFF Delay Time t (off) 105 ns d Fall Time t 87 ns f Total Gate Charge Qg 11 nC Gate-to-Source Charge Qgs V =--6V, V =--4.5V, I =--6A 1.5 nC DS GS D Gate-to-Drain Miller Charge Qgd 2.9 nC Diode Forward Voltage V I =--6A, V =0V --0.81 --1.2 V SD S GS Switching Time Test Circuit V V = --6V IN DD 0V --4.5V I = --3A D V IN R =2 L D V OUT PW=10 s D.C.1% G ECH8652 P.G 50 S Ordering Information Device Package Shipping memo ECH8652-TL-H ECH8 3,000pcs./reel Pb Free and Halogen Free No. A0935-2/7