X-On Electronics has gained recognition as a prominent supplier of RTQ020N05TR MOSFETs across the USA, India, Europe, Australia, and various other global locations. RTQ020N05TR MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

RTQ020N05TR ROHM

Hot RTQ020N05TR electronic component of ROHM
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Part No.RTQ020N05TR
Manufacturer: ROHM
Category: MOSFETs
Description: Trans MOSFET N-CH 45V 2A 6-Pin TSMT T/R
Datasheet: RTQ020N05TR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
589: USD 0.1669 ea
Line Total: USD 98.3 
Availability - 1156
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ: 589  Multiples: 1
Pack Size: 1
Availability Price Quantity
1179
Ship by Wed. 25 Dec to Fri. 27 Dec
MOQ : 1
Multiples : 1
1 : USD 0.6974
10 : USD 0.4807
100 : USD 0.3223
500 : USD 0.2541
1000 : USD 0.231
3000 : USD 0.1837
9000 : USD 0.1771
24000 : USD 0.176
45000 : USD 0.1749

1156
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 589
Multiples : 1
589 : USD 0.1669
1000 : USD 0.1615

5233
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 37
Multiples : 1
37 : USD 1.1212
53 : USD 0.772
100 : USD 0.5119
200 : USD 0.5103
500 : USD 0.3917
1000 : USD 0.3462
3000 : USD 0.3267

   
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Deleted
Continuous Drain Current
Gate-Source Voltage Max
Power Dissipation
Mounting
Operating Temp Range
Pin Count
Polarity
Type
Number Of Elements
Operating Temperature Classification
Drain-Source On-Volt
Rad Hardened
Package Type
Configuration
Series
Transistor Type
Brand
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the RTQ020N05TR from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RTQ020N05TR and other electronic components in the MOSFETs category and beyond.

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RTQ020N05 Datasheet Nch 45V 2A Small Signal MOSFET llOutline SOT-457T V 45V DSS SC-95 R (Max.) 190m DS(on) TSMT6 I 2A D P 1.25W D llInner circuit llFeatures 1) Low on - resistance 2) Built-in G-S protection diode 3) Small surface mount package(TSMT6) 4) Pb-free lead plating RoHS compliant llPackaging specifications Embossed Packing Tape Reel size (mm) 180 llApplication Tape width (mm) 8 Type Switching Quantity (pcs) 3000 Taping code TR Marking PU llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V 45 V DSS I Continuous drain current 2 A D *1 I Pulsed drain current 8 A DP V Gate - Source voltage 12 V GSS *2 P 1.25 W D Power dissipation *3 P 0.95 W D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 1/11 2019 ROHM Co., Ltd. All rights reserved. 20190527 - Rev.005 RTQ020N05 Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *2 R - - 100 /W thJA Thermal resistance, junction - ambient *3 R - - 132 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 45 - - V (BR)DSS GS D voltage V I = 1mA (BR)DSS D Breakdown voltage - 46.8 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = 45V, V = 0V - - 1 A DSS DS GS drain current I V = 12V, V = 0V Gate - Source leakage current - - 10 A GSS GS DS V Gate threshold voltage V = 10V, I = 1mA 0.5 - 1.5 V GS(th) DS D V I = 1mA GS(th) D Gate threshold voltage - -3.9 - mV/ temperature coefficient T referenced to 25 j V = 4.5V, I = 2A - 140 190 GS D Static drain - source *4 R V = 4.0V, I = 2A - 150 210 m DS(on) GS D on - state resistance V = 2.5V, I = 2A - 200 280 GS D R Gate resistance f = 1MHz, open drain - 10 - G Forward Transfer *4 Y V = 10V, I = 2A 1.6 - - S fs DS D Admittance *1 Pw10s , Duty cycle 1% *2 Mounted on a ceramic board (30300.8mm) *3 Mounted on a FR4 (25250.8mm) *4 Pulsed www.rohm.com 2/11 20190527 - Rev.005 2019 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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