X-On Electronics has gained recognition as a prominent supplier of RW1C015UNT2R MOSFETs across the USA, India, Europe, Australia, and various other global locations. RW1C015UNT2R MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

RW1C015UNT2R ROHM

RW1C015UNT2R electronic component of ROHM
RW1C015UNT2R ROHM
RW1C015UNT2R MOSFETs
RW1C015UNT2R  Semiconductors

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See Product Specifications
Part No. RW1C015UNT2R
Manufacturer: ROHM
Category: MOSFETs
Description: Trans MOSFET N-CH 20V 1.5A 6-Pin WEMT T/R
Datasheet: RW1C015UNT2R Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
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Obsolete
Availability Price Quantity
0
MOQ : 8000
Multiples : 8000
8000 : USD 0.187
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MOQ : 544
Multiples : 1
544 : USD 0.1807
1000 : USD 0.1748
2500 : USD 0.1631
5000 : USD 0.1587
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MOQ : 249
Multiples : 249
249 : USD 0.2823
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MOQ : 556
Multiples : 1
556 : USD 0.1712
1000 : USD 0.1655
2500 : USD 0.1607
5000 : USD 0.1563
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Obsolete
   
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Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
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We are delighted to provide the RW1C015UNT2R from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RW1C015UNT2R and other electronic components in the MOSFETs category and beyond.

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RW1C015UN Datasheet Nch 20V 1.5A Small Signal MOSFET llOutline SOT-563T V 20V DSS WEMT6 R (Max.) 180m DS(on) I 1.5A D P 0.7W D llInner circuit llFeatures 1) Low on - resistance. 2) 1.5V Drive. 3) Built-in G-S protection diode. 4) Small surface mount package(WEMT6) 5) Pb-free lead plating RoHS compliant llPackaging specifications Embossed Packing Tape Reel size (mm) 180 llApplication Tape width (mm) 8 Type Switching Basic ordering unit (pcs) 8000 Taping code T2R Marking PS llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V 20 V DSS I Continuous drain current 1.5 A D *1 I Pulsed drain current 3 A DP V Gate - Source voltage 10 V GSS *2 P 0.7 W D Power dissipation *3 P 0.4 W D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 1/11 2016 ROHM Co., Ltd. All rights reserved. 20160808 - Rev.001 Not Recommended for New Designs RW1C015UN Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *2 R - - 179 /W thJA Thermal resistance, junction - ambient *3 R - - 313 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 20 - - V (BR)DSS GS D voltage V I = 1mA (BR)DSS D Breakdown voltage - 29.0 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = 20V, V = 0V - - 1 A DSS DS GS drain current I V = 10V, V = 0V Gate - Source leakage current - - 10 A GSS GS DS V Gate threshold voltage V = 10V, I = 1mA 0.3 - 1.0 V GS(th) DS D V I = 1mA GS(th) D Gate threshold voltage - -1.6 - mV/ temperature coefficient T referenced to 25 j V = 4.5V, I = 1.5A - 130 180 GS D V = 2.5V, I = 1.5A - 170 240 GS D V = 1.8V, I = 0.8A - 220 310 GS D Static drain - source *4 R m DS(on) on - state resistance V = 1.5V, I = 0.3A - 300 600 GS D V = 4.5V, I = 1.5A GS D - 200 280 T = 125 j R Gate resistance f = 1MHz, open drain - 25 - G Forward Transfer *4 Y V = 10V, I = 1.5A 1.6 3.2 - S fs DS D Admittance *1 Pw10s , Duty cycle 1% *2 Mounted on a ceramic board (30300.8mm) 2 *3 Mounted on a FR4 (12200.8mm,Cu pad:240mm ) *4 Pulsed www.rohm.com 2/11 20160808 - Rev.001 2016 ROHM Co., Ltd. All rights reserved. Not Recommended for New Designs

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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