RW1C026ZP Datasheet Pch -20V -2.5A Middle Power MOSFET llOutline WEMT6 V -20V DSS R (Max.) 70m DS(on) I 2.5A D P 0.7W D llInner circuit llFeatures 1) Low on - resistance. 2) High Power small mold Package (WEMT6). 3) Pb-free lead plating RoHS compliant. 4) Halogen Free. llPackaging specifications Embossed Packing Tape Reel size (mm) 180 llApplication Tape width (mm) 8 Type Switching Basic ordering unit (pcs) 8000 Taping code T2CR Marking ZK llAbsolute maximum ratings (T = 25C) a Parameter Symbol Value Unit V Drain - Source voltage -20 V DSS I Continuous drain current 2.5 A D *1 I Pulsed drain current 10 A D,pulse V Gate - Source voltage 10 V GSS *2 P Power dissipation 0.7 W D T Junction temperature 150 j T Range of storage temperature -55 to +150 stg www.rohm.com 2014 ROHM Co., Ltd. All rights reserved. 1/11 20140707 - Rev.001 Not Recommended for New Designs RW1C026ZP Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *2 Thermal resistance, junction - ambient R - 179 - /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = -1mA -20 - - V (BR)DSS GS D voltage V I = -1mA (BR)DSS D Breakdown voltage - -21.9 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = -20V, V = 0V - - -1 A DSS DS GS drain current I Gate - Source leakage current V = 10V, V = 0V - - 10 A GSS GS DS Gate threshold voltage V V = -10V, I = -1mA -0.3 - -1 V GS(th) DS D V I = -1mA GS(th) D Gate threshold voltage - 2.4 - mV/ temperature coefficient T referenced to 25 j V = -4.5V, I = -2.5A - 50 70 GS D V = -2.5V, I = -1.2A - 65 90 GS D Static drain - source *3 R m DS(on) on - state resistance V = -1.8V, I = -1.2A - 85 130 GS D V = -1.5V, I = -0.5A - 100 200 GS D *3 g V = -10V, I = -2.5A Transconductance 2.2 - - S fs DS D *1 Pw 10s, Duty cycle 1% *2 MOUNTED ON A CERAMIC BOARD *3 Pulsed www.rohm.com 2/11 20140707 - Rev.001 2014 ROHM Co., Ltd. All rights reserved. Not Recommended for New Designs