X-On Electronics has gained recognition as a prominent supplier of DMN1004UFV-7 MOSFETs across the USA, India, Europe, Australia, and various other global locations. DMN1004UFV-7 MOSFETs are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

DMN1004UFV-7 Diodes Incorporated

DMN1004UFV-7 electronic component of Diodes Incorporated
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Part No.DMN1004UFV-7
Manufacturer: Diodes Incorporated
Category: MOSFETs
Description: MOSFET MOSFET BVDSS: 8V-24V
Datasheet: DMN1004UFV-7 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.55 ea
Line Total: USD 0.55 
Availability - 10384
Ship by Wed. 25 Dec to Fri. 27 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
10384
Ship by Wed. 25 Dec to Fri. 27 Dec
MOQ : 1
Multiples : 1
1 : USD 0.55
10 : USD 0.4884
100 : USD 0.3399
500 : USD 0.2651
1000 : USD 0.2398
2000 : USD 0.2024

996
Ship by Wed. 25 Dec to Fri. 27 Dec
MOQ : 1
Multiples : 1
1 : USD 0.532
50 : USD 0.4424
57 : USD 0.3009
157 : USD 0.2844
1000 : USD 0.273

   
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Transistor Type
Brand
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the DMN1004UFV-7 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DMN1004UFV-7 and other electronic components in the MOSFETs category and beyond.

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DMN1004UFV 12V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8 (Type UX) Product Summary Features I Max Low R Ensures On-State Losses are Minimized D DS(ON) BV R Max DSS DS(ON) T = +25C Small Form Factor Thermally Efficient Package Enables Higher C 70A Density End Products 3.8m V = 4.5V GS 12V Occupies just 33% of the Board Area Occupied by SO-8 Enabling 55A 5.1m V = 2.5V GS Smaller End Product ESD Protected Gate Description Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) This MOSFET is designed to minimize the on-state resistance (R ), yet maintain superior switching performance, making it DS(ON) ideal for high efficiency power management applications. Mechanical Data Applications Case: PowerDI 3333-8 (Type UX) Power Management Functions Case Material: Molded Plastic,Gree Molding Compound. DC-DC Converters UL Flammability Classification Rating 94V-0 Battery Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections Indicator: See Diagram Terminals: Finish Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.072 grams (Approximate) Pin1 D S S S G G ESD PROTECTED D Gate Protection D D S Diode D Top View Equivalent Circuit Bottom View Ordering Information (Note 4) Part Number Case Packaging DMN1004UFV-7 PowerDI3333-8 (Type UX) 2,000/Tape & Reel DMN1004UFV-13 PowerDI3333-8 (Type UX) 3,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMN1004UFV Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 12 V DSS Gate-Source Voltage 8 V V GSS 70 T = +25C C Continuous Drain Current, V = 4.5V (Note 7) I A GS D T = +70C 50 TCA = +70C Pulsed Drain Current (380s Pulse, Duty Cycle = 1%) T = +70C I 80 A A DM Maximum Continuous Body Diode Forward Current (Note 7) I 70 A S Avalanche Current, L = 0.1mH (Note 8) 34 A I AS Avalanche Energy, L = 0.1mH (Note 8) mJ E AS Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Total Power Dissipation (Note 5) P 0.9 W D Steady State Thermal Resistance, Junction to Ambient (Note 5) R 134 C/W JA Total Power Dissipation (Note 6) P 1.9 W D Steady State Thermal Resistance, Junction to Ambient (Note 6) R 66 JA C/W Thermal Resistance, Junction to Case (Note 7) 3.4 R JC Operating and Storage Temperature Range -55 to +150 C T T J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 9) Drain-Source Breakdown Voltage BV 12 V V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current 1 A I V = 9.6V, V = 0V DSS DS GS Gate-Source Leakage 10 A I V = 8V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 9) Gate Threshold Voltage V 0.3 1.0 V V = V , I = 250A GS(TH) DS GS D 2.8 3.8 V = 4.5V, I = 15A GS D Static Drain-Source On-Resistance R m DS(ON) 3.2 5.1 V = 2.5V, I = 10A GS D Diode Forward Voltage 0.75 1.2 V V V = 0V, I = 3.2A SD GS S DYNAMIC CHARACTERISTICS (Note 10) Input Capacitance C 2,385 pF iss VDS = 6V, VGS = 0V, 678 Output Capacitance C pF oss f = 1MHz Reverse Transfer Capacitance 520 pF C rss Gate Resistance 2.2 R V = 0V, V = 0V, f = 1MHz G DS GS 26 nC Total Gate Charge (V = 4.5V) Q GS G 47 Total Gate Charge (V = 8V) Q nC GS G V = 6V, I = 10A DS D 2.8 Gate-Source Charge Q nC GS Gate-Drain Charge 5.3 nC Q GD Turn-On Delay Time 5.3 ns t D(ON) Turn-On Rise Time 10.7 ns t V = 6V, V = 4.5V, R DD GS Turn-Off Delay Time t 31.6 ns R = 1, I = 5A D(OFF) G D 16.9 Turn-Off Fall Time t ns F Reverse Recovery Time 24.3 ns t RR I = 2A, di/dt = 100A/s F Reverse Recovery Charge 7.4 nC Q RR Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1-inch square copper plate. 7. Thermal resistance from junction to soldering point (on the exposed drain pad). 8. I and E rating are based on low frequency and duty cycles to keep T = +25C. AS AS J 9. Short duration pulse test used to minimize self-heating effect. 10. Guaranteed by design. Not subject to product testing. 2 of 7 DMN1004UFV January 2017 Diodes Incorporated www.diodes.com Document number: DS38933 Rev. 3 - 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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