DMN1004UFV 12V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8 (Type UX) Product Summary Features I Max Low R Ensures On-State Losses are Minimized D DS(ON) BV R Max DSS DS(ON) T = +25C Small Form Factor Thermally Efficient Package Enables Higher C 70A Density End Products 3.8m V = 4.5V GS 12V Occupies just 33% of the Board Area Occupied by SO-8 Enabling 55A 5.1m V = 2.5V GS Smaller End Product ESD Protected Gate Description Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) This MOSFET is designed to minimize the on-state resistance (R ), yet maintain superior switching performance, making it DS(ON) ideal for high efficiency power management applications. Mechanical Data Applications Case: PowerDI 3333-8 (Type UX) Power Management Functions Case Material: Molded Plastic,Gree Molding Compound. DC-DC Converters UL Flammability Classification Rating 94V-0 Battery Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections Indicator: See Diagram Terminals: Finish Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.072 grams (Approximate) Pin1 D S S S G G ESD PROTECTED D Gate Protection D D S Diode D Top View Equivalent Circuit Bottom View Ordering Information (Note 4) Part Number Case Packaging DMN1004UFV-7 PowerDI3333-8 (Type UX) 2,000/Tape & Reel DMN1004UFV-13 PowerDI3333-8 (Type UX) 3,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMN1004UFV Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 12 V DSS Gate-Source Voltage 8 V V GSS 70 T = +25C C Continuous Drain Current, V = 4.5V (Note 7) I A GS D T = +70C 50 TCA = +70C Pulsed Drain Current (380s Pulse, Duty Cycle = 1%) T = +70C I 80 A A DM Maximum Continuous Body Diode Forward Current (Note 7) I 70 A S Avalanche Current, L = 0.1mH (Note 8) 34 A I AS Avalanche Energy, L = 0.1mH (Note 8) mJ E AS Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Total Power Dissipation (Note 5) P 0.9 W D Steady State Thermal Resistance, Junction to Ambient (Note 5) R 134 C/W JA Total Power Dissipation (Note 6) P 1.9 W D Steady State Thermal Resistance, Junction to Ambient (Note 6) R 66 JA C/W Thermal Resistance, Junction to Case (Note 7) 3.4 R JC Operating and Storage Temperature Range -55 to +150 C T T J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 9) Drain-Source Breakdown Voltage BV 12 V V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current 1 A I V = 9.6V, V = 0V DSS DS GS Gate-Source Leakage 10 A I V = 8V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 9) Gate Threshold Voltage V 0.3 1.0 V V = V , I = 250A GS(TH) DS GS D 2.8 3.8 V = 4.5V, I = 15A GS D Static Drain-Source On-Resistance R m DS(ON) 3.2 5.1 V = 2.5V, I = 10A GS D Diode Forward Voltage 0.75 1.2 V V V = 0V, I = 3.2A SD GS S DYNAMIC CHARACTERISTICS (Note 10) Input Capacitance C 2,385 pF iss VDS = 6V, VGS = 0V, 678 Output Capacitance C pF oss f = 1MHz Reverse Transfer Capacitance 520 pF C rss Gate Resistance 2.2 R V = 0V, V = 0V, f = 1MHz G DS GS 26 nC Total Gate Charge (V = 4.5V) Q GS G 47 Total Gate Charge (V = 8V) Q nC GS G V = 6V, I = 10A DS D 2.8 Gate-Source Charge Q nC GS Gate-Drain Charge 5.3 nC Q GD Turn-On Delay Time 5.3 ns t D(ON) Turn-On Rise Time 10.7 ns t V = 6V, V = 4.5V, R DD GS Turn-Off Delay Time t 31.6 ns R = 1, I = 5A D(OFF) G D 16.9 Turn-Off Fall Time t ns F Reverse Recovery Time 24.3 ns t RR I = 2A, di/dt = 100A/s F Reverse Recovery Charge 7.4 nC Q RR Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1-inch square copper plate. 7. Thermal resistance from junction to soldering point (on the exposed drain pad). 8. I and E rating are based on low frequency and duty cycles to keep T = +25C. AS AS J 9. Short duration pulse test used to minimize self-heating effect. 10. Guaranteed by design. Not subject to product testing. 2 of 7 DMN1004UFV January 2017 Diodes Incorporated www.diodes.com Document number: DS38933 Rev. 3 - 2