X-On Electronics has gained recognition as a prominent supplier of QH8JA1TCR MOSFETs across the USA, India, Europe, Australia, and various other global locations. QH8JA1TCR MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

QH8JA1TCR ROHM

QH8JA1TCR electronic component of ROHM
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See Product Specifications
Part No.QH8JA1TCR
Manufacturer: ROHM
Category: MOSFETs
Description: MOSFET 20V Pch+Pch Si MOSFET
Datasheet: QH8JA1TCR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.133 ea
Line Total: USD 1.13 
Availability - 1370
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1370
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 1.133
10 : USD 0.7458
100 : USD 0.5324
500 : USD 0.4345
1000 : USD 0.4015
3000 : USD 0.3696
6000 : USD 0.3696
9000 : USD 0.3542

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Transistor Type
Brand
Forward Transconductance - Min
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Cnhts
Hts Code
Mxhts
Taric
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the QH8JA1TCR from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the QH8JA1TCR and other electronic components in the MOSFETs category and beyond.

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QH8JA1 Datasheet -20V Pch +Pch Middle Power MOSFET llOutline V -20V DSS R (Max.) 38m DS(on) TSMT8 I 5.0A D P 1.5W D llFeatures llInner circuit 1) Low on - resistance. 2) Small surface mount package(TSMT8) 3) -1.8V Drive. 4) Pb-free lead plating RoHS compliant llPackaging specifications Embossed Packing Tape llApplication Reel size (mm) 180 Switching Tape width (mm) 8 Type Quantity (pcs) 3000 Taping code TCR Marking JA1 llAbsolute maximum ratings (T = 25C ,unless otherwise specified) <Tr1 and Tr2> a Parameter Symbol Value Unit Drain - Source voltage V -20 V DSS *1 I Continuous drain current 5.0 A D *2 I Pulsed drain current 18 A DP V Gate - Source voltage 10 V GSS *3 I Avalanche current, single pulse -5.0 A AS *3 E Avalanche energy, single pulse 8.9 mJ AS *4 P 1.5 D Power dissipation (total) W *5 P 1.1 D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 1/11 20190527 - Rev.002 2019 ROHM Co., Ltd. All rights reserved. QH8JA1 Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *4 R - - 83.3 thJA Thermal resistance, junction - ambient (total) /W *4 R - - 100 thJA llElectrical characteristics (T = 25C) <Tr1 and Tr2> a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = -1mA -20 - - V (BR)DSS GS D voltage V (BR)DSS I = -1mA D Breakdown voltage - -10.3 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = -20V, V = 0V - - -1 A DSS DS GS drain current Gate - Source I V = 10V, V = 0V - - 100 nA GSS GS DS leakage current Gate threshold V V = V , I = -1mA -0.5 - -1.2 V GS(th) DS GS D voltage V I = -1mA GS(th) D Gate threshold voltage - 1.7 - mV/ temperature coefficient T j referenced to 25 V = -4.5V, I = -5.0A - 28 38 GS D Static drain - source *6 R V = -2.5V, I = -5.0A - 35 48 m DS(on) GS D on - state resistance V = -1.8V, I = -1.2A - 49 77 GS D R Gate resistance f = 1MHz, open drain - 11 - G Forward Transfer *6 Y V = -5V, I = -5A 5.5 - - S fs DS D Admittance *1 Vgs 2.5V *2 Pw10s , Duty cycle 1% *3 L 0.5mH, V = -10V, R = 25, STARTING T = 25 Fig.3-1,3-2 DD G j *4 Mounted on a ceramic board (30300.8mm) *5 Mounted on a FR4 (25250.8mm) *6 Pulsed www.rohm.com 2019 ROHM Co., Ltd. All rights reserved. 2/11 20190527 - Rev.002

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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