QH8MA4 Datasheet 30V Nch+Pch Middle Power MOSFET llOutline TSMT8 Symbol Tr1:Nch Tr2:Pch V 30V -30V DSS R (Max.) 16.0m 28.6m DS(on) I 9.0A 8.0A D P 2.6W D llFeatures llInner circuit 1) Low on - resistance. 2) Small Surface Mount Package (TSMT8). 3) Pb-free lead plating RoHS compliant. 4) Halogen Free. llPackaging specifications Embossed Packing Tape llApplication Reel size (mm) 180 Switching Tape width (mm) 8 Type Basic ordering unit (pcs) 3000 Taping code TR Marking MA4 llAbsolute maximum ratings (T = 25C) ,unless otherwise specified. a Value Parameter Symbol Unit Tr1:Nch Tr2:Pch V Drain - Source voltage 30 -30 V DSS *1 Continuous drain current I 9.0 8.0 A D *2 I Pulsed drain current 18 18 A D, pulse Gate - Source voltage V 20 20 V GSS *4 E Avalanche energy, single pulse 3.5 2.2 mJ AS *4 I Avalanche current 7.0 -5.5 A AS *1 P 2.6 D total *3 P Power dissipation 1.5 W D *3 element P 1.25 D T Junction temperature 150 j T Range of storage temperature -55 to +150 stg www.rohm.com 1/19 20150730 - Rev.004 2015 ROHM Co., Ltd. All rights reserved. QH8MA4 Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *3 R Thermal resistance, junction - ambient - - 83.3 /W thJA llElectrical characteristics (T = 25C) , unless otherwise specified a Values Parameter Symbol Type Conditions Unit Min. Typ. Max. Tr1 V = 0V, I = 1mA 30 - - GS D Drain - Source breakdown V V (BR)DSS voltage Tr2 V = 0V, I = -1mA -30 - - GS D V I = 1mA, referenced to 25 Tr1 - 21 - (BR)DSS D Breakdown voltage mV/ temperature coefficient T I = -1mA, referenced to 25 j Tr2 - -22 - D Tr1 V = 30V, V = 0V - - 1 DS GS Zero gate voltage I A DSS drain current Tr2 V = -30V, V = 0V - - -1 DS GS Tr1 V = 0V, V = 20V - - 100 DS GS Gate - Source I nA GSS leakage current Tr2 V = 0V, V = 20V - - 100 DS GS Tr1 V = V , I = 1mA 1.0 - 2.5 DS GS D Gate threshold V V GS(th) voltage V = V , I = -1mA Tr2 -1.0 - -2.5 DS GS D V I = 1mA, referenced to 25 Tr1 - -3 - GS(th) D Gate threshold voltage mV/ temperature coefficient T I = -1mA, referenced to 25 Tr2 - 2.9 - j D V = 10V, I = 9A - 12.3 16.0 GS D Tr1 V = 4.5V, I = 7A - 18.2 23.7 GS D Static drain - source *5 R m DS(on) on - state resistance V = -10V, I = -8A - 22.0 28.6 GS D Tr2 V = -4.5V, I = -5.5A - 31.0 40.3 GS D Tr1 - 3.3 - Gate input resistance R f=1MHz, open drain G Tr2 - 6.0 - Tr1 V = 5V, I = 7A 4.4 - - DS D *5 Transconductance g S fs Tr2 V = -5V, I = -5.5A 5.5 - - DS D *1 Pw 1s, Limited only by maximum temperature allowed. *2 Pw 10s, Duty cycle 1% *3 Mounted on a ceramic board (30300.8mm) *4 Tr1: L 0.1mH, V = 15V, R = 25, STARTING T = 25 Fig.3-1,3-2 DD G j Tr2: L 0.1mH, V = -15V, R = 25, STARTING T = 25 Fig.6-1,6-2 DD G j *5 Pulsed www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2/19 20150730 - Rev.004