QS5U33TR ROHM

QS5U33 Datasheet 4V Drive Pch+SBD MOSFET llOutline TSMT5 V -30V DSS R (Max.) 225m DS(on) I 2.0A D P 1.25W D llInner circuit llFeatures 1) The QS5U33 combines Pch MOSFET with a Schottky barrier diode in a single TSMT5 package. 2) Low on-state resistance with fast swicthing 3) Low voltage drive (4V drive). 4) Built-in Low V schottky barrier diode. F 5) Pb-free lead plating RoHS compliant. llPackaging specifications Embossed Packing Tape Reel size (mm) 180 llApplication Tape width (mm) 8 Type Load switch, DC/ DC conversion Basic ordering unit (pcs) 3000 Taping code TR Marking U33 llAbsolute maximum ratings (T = 25C) a <MOSFET> Parameter Symbol Value Unit V Drain - Source voltage -30 V DSS V Gate - Source voltage 20 V GSS I Continuous drain current 2.0 A D *1 Pulsed drain current I 8.0 A D, pulse Continuous source current (body diode) I -0.75 A S *1 Pulsed source current (body diode) I -8.0 A S, pulse *3 Power dissipation P 0.9 W/element D T Junction temperature 150 j www.rohm.com 1/10 2014 ROHM Co., Ltd. All rights reserved. 20130716 - Rev.001 QS5U33 Datasheet llAbsolute maximum ratings (T = 25C) a <SBD> Parameter Symbol Value Unit Repetitive peak reverse voltage V 25 V RM Reverse voltage V 20 V R Forward current I 1.0 A F *2 I Forward current surge peak 3.0 A FSM *3 P Power dissipation 0.7 W/element D T Junction temperature 150 j <MOSFET + SBD> Parameter Symbol Value Unit *3 P Power dissipation 1.25 W/total D T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) a <MOSFET> Values Parameter Symbol Conditions Unit Min. Typ. Max. Gate - Source leakage current I V = 20V, V = 0V - - 10 A GSS GS DS Drain - Source breakdown V V = 0V, I = -1mA -30 - - V (BR)DSS GS D voltage Zero gate voltage I V = -30V, V = 0V - - -1 A DSS DS GS drain current V Gate threshold voltage V = -10V, I = -1mA -1.0 - -2.5 V GS(th) DS D V = -10V, I = -2A - 95 135 GS D Static drain - source *4 R V = -4.5V, I = -1A - 145 205 m DS(on) GS D on - state resistance V = -4.0V, I = -1A - 160 225 GS D *4 Transconductance g V = -10V, I = -1A 1.4 - - S fs DS D www.rohm.com 2/10 20130716 - Rev.001 2014 ROHM Co., Ltd. All rights reserved.