QS6K1FRAQS6K1 Transistors AEC-Q101 Qualified 2.5V Drive Nch+Nch MOS FET QS6K1FRA QS6K1 z Structure z External dimensions (Unit : mm) Silicon N-channel TSMT6 MOS FET 1.0MAX 2.9 0.85 1.9 0.95 0.95 0.7 (6) (5) (4) z Features 1) Low on-resistance. 0~0.1 (1) (2) (3) 2) Built-in G-S Protection Diode. 1pin mark 3) Small and Surface Mount Package (TSMT6). 0.16 0.4 Each lead has same dimensions z Application Abbreviated symbol : K01 Power switching, DC / DC converter. z Equivalent circuit z Packaging specifications (6) (5) (4) (6) (5) (4) Package Taping 2 2 Type Code TR Basic ordering unit (pieces) 3000 QS6K1FRAQS6K1 (1) (2) (3) 1 1 (1) Tr1 Gate (2) Tr2 Source (1) (2) (3) (3) Tr2 Gate (4) Tr2 Drain z Absolute maximum ratings (Ta=25C) (5) Tr1 Source 1 ESD PROTECTION DIODE (6) Tr1 Drain <It is the same ratings for the Tr1 and Tr2> 2 BODY DIODE A protection diode is included between the gate and Parameter Symbol Limits Unit the source terminals to protect the diode against static electricity when the product is in use. Use the protection Drain-source voltage V 30 V DSS circuit when the fixed voltages are exceeded. Gate-source voltage V 12 V GSS Continuous ID 1.0 A Drain current 1 Pulsed IDP 4.0 A Source current Continuous IS 0.8 A (Body diode) 1 Pulsed ISP 4.0 A 1.25 W / TOTAL 2 Total power dissipation (TC=25C) PD 0.9 W / ELEMENT Channel temperature Tch 150 C Storage temperature Tstg 55 to +150 C 1 Pw10s, Duty cycle1% 2 Mounted on a ceramic board z Thermal resistance Parameter Symbol Limits Unit 100 C / W / TOTAL Rth (ch-a) Channel to ambient 139 C / W / ELEMENT Mounted on a ceramic board Rev.B 1/3 1.6 2.8 0.3~0.6QS6K1FRAQS6K1 Transistors z Electrical characteristics (Ta=25C) <It is the same characteristics for the Tr1 and Tr2> Parameter Symbol Min. Typ. Max. Conditions Unit Gate-source leakage IGSS 10 AVGS=12V, VDS=0V Drain-source breakdown voltage V 30 VI =1mA, V =0V (BR) DSS D GS Zero gate voltage drain current IDSS 1 AVDS=30V, VGS=0V Gate threshold voltage VGS (th) 0.5 1.5 V VDS=10V, ID=1mA 170 238 I =1.0A, V =4.5V D GS Static drain-source on-state RDS (on) 180 252 m ID=1.0A, VGS=4.0V resistance 260 364 ID=1.0A, VGS=2.5V Forward transfer admittance Yfs 1.0 SID=1.0A, VDS=10V Input capacitance C 77 pF V =10V iss DS Output capacitance Coss 25 pF VGS=0V Reverse transfer capacitance Crss 15 pF f=1MHz Turn-on delay time t 7 ns I =500mA, V 15V d (on) D DD Rise time tr 7 ns VGS=4.5V Turn-off delay time td (off) 15 ns RL=30.0 Fall time tf 6 ns RG=10 Total gate charge Q 1.7 2.4 nC V 15V g DD Gate-source charge Qgs 0.4 nC VGS=4.5V Gate-drain charge Qgd 0.4 nC ID=1.0A Pulsed z Body diode characteristics (Source-Drain) (Ta=25C) <It is the same characteristics for the Tr1 and Tr2> Parameter Symbol Min. Typ. Max. Unit Conditions Forward voltage VSD 1.2 V IS=3.2A, VGS=0V Pulsed Rev.B 2/3
