QS6M4TR ROHM

QS6M4 Transistors 2.5V Drive Nch+Pch MOSFET QS6M4 z Dimensions (Unit : mm) z Structure Silicon P-channel MOSFET TSMT6 Silicon N-channel MOSFET 1.0MAX 2.9 0.85 1.9 0.95 0.95 0.7 (6) (5) (4) z Features 1) The QS6M4 combines Pch MOSFET with a Nch 0~0.1 (1) (2) (3) MOSFET in a single TSMT6 package. 1pin mark 2) Low on-state resistance with a fast switching. 0.16 0.4 3) Low voltage drive (2.5V). Each lead has same dimensions Abbreviated symbol : M04 z Applications Load switch, inverter z Packaging specifications z Equivalent circuit (6) (5) (4) Package Taping Type Code TR 1 Basic ordering unit (pieces) 3000 QS6M4 2 2 (1) Tr1 (Nch) Source 1 z Absolute maximum ratings (Ta=25C) (2) Tr1 (Nch) Gate (3) Tr2 (Pch) Drain Limits (1) (2) (3) Parameter Symbol Unit (4) Tr2 (Pch) Source Nchannel Pchannel (5) Tr2 (Pch) Gate 1 ESD PROTECTION DIODE Drain-source voltage V 30 20 V DSS (6) Tr1 (Nch) Drain 2 BODY DIODE Gate-source voltage VGSS 12 12 V Continuous ID 1.5 1.5 A Drain current 1 Pulsed IDP 6.0 6.0 A Source current Continuous IS 0.8 0.75 A 1 (Body diode) I 6.0 6.0 A Pulsed SP 1.25 W / TOTAL 2 Total power dissipation PD 0.9 W / ELEMENT Channel temperature Tch 150 C Storage temperature Tstg 55 to +150 C 1 Pw10s, Duty cycle1% 2 Mounted on a ceramic board z Thermal resistance Parameter Symbol Limits Unit 100 C / W / TOTAL Channel to ambient Rth (ch-a) 139 C / W / ELEMENT Mounted on a ceramic board Rev.B 1/5 1.6 2.8 0.3~0.6QS6M4 Transistors z Electrical characteristics (Ta=25C) <Tr1. N-ch MOSFET> Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS 10 AVGS=12V / VDS=0V Drain-source breakdown voltage V 30 VI =1mA / V =0V (BR) DSS D GS Zero gate voltage drain current IDSS 1 AVDS=30V / VGS=0V Gate threshold voltage VGS (th) 0.5 1.5 V VDS=10V / ID=1mA 170 230 I =1.5A / V =4.5V D GS Static drain-source on-state RDS (on) 180 245 m ID=1.5A / VGS=4.0V resistance 260 360 ID=1.0A / VGS=2.5V Forward transfer admittance Y 1.0 SV =10V / I =1.0A fs DS D Input capacitance Ciss 80 pF VDS=10V Output capacitance Coss 25 pF VGS=0V Reverse transfer capacitance C 15 pF f=1MHz rss Turn-on delay time td (on) 7 ns ID=1A, VDD 15V Rise time tr 18 ns VGS=4.5V Turn-off delay time t 15 ns R =15 / R =10 d (off) L G Fall time tf 15 ns Total gate charge Qg 1.6 nC VDD 15V RL=10 Gate-source charge Q 0.5 nC V =4.5V R =10 gs GS G Gate-drain charge Qgd0.9 nC ID=1.5A Pulsed z Body diode characteristics (Source-Drain) <Tr1. N-ch MOSFET> Parameter Symbol Min. Typ. Max. Unit Conditions Forward voltage V 1.2 V I =3.2A / V =0V SD S GS Pulsed Rev.B 2/5