X-On Electronics has gained recognition as a prominent supplier of QS8J13TR MOSFETs across the USA, India, Europe, Australia, and various other global locations. QS8J13TR MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

QS8J13TR ROHM

QS8J13TR electronic component of ROHM
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See Product Specifications
Part No.QS8J13TR
Manufacturer: ROHM
Category: MOSFETs
Description: ROHM Semiconductor MOSFET
Datasheet: QS8J13TR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.023 ea
Line Total: USD 1.02 
Availability - 2910
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
87
Ship by Fri. 06 Dec to Wed. 11 Dec
MOQ : 1
Multiples : 1
1 : USD 0.632
10 : USD 0.6167
30 : USD 0.6073
100 : USD 0.5957

2910
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 1.023
10 : USD 0.6622
100 : USD 0.4653
500 : USD 0.4015
1000 : USD 0.3421
3000 : USD 0.3124
9000 : USD 0.2992

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Series
Transistor Type
Brand
Factory Pack Quantity :
Configuration
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the QS8J13TR from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the QS8J13TR and other electronic components in the MOSFETs category and beyond.

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QS8J13 Datasheet -12V Pch+Pch Middle Power MOSFET llOutline TSMT8 V -12V DSS R (Max.) 22m DS(on) I 5.5A D P 1.5W D llFeatures llInner circuit 1) Low on - resistance. 2) Small Surface Mount Package . 3) Pb-free lead plating RoHS compliant. 4) Halogen Free. llPackaging specifications Embossed Packing Tape Reel size (mm) 180 llApplication Tape width (mm) 8 Type Switching Basic ordering unit (pcs) 3000 Taping code TR Marking J13 llAbsolute maximum ratings (T = 25C) <It is the same ratings for the Tr1 and Tr2> a Parameter Symbol Value Unit V Drain - Source voltage -12 V DSS *1 I Continuous drain current 5.5 A D *2 I Pulsed drain current 18 A D,pulse V Gate - Source voltage 0 -8 V GSS total 1.5 *3 Power dissipation P W D element 1.25 T Junction temperature 150 j T Range of storage temperature -55 to +150 stg www.rohm.com 1/11 2014 ROHM Co., Ltd. All rights reserved. 20140806 - Rev.001 QS8J13 Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. total - 83.3 - *3 Thermal resistance, junction - ambient R /W thJA element - 100 - llElectrical characteristics (T = 25C) <It is the same characteristics for the Tr1 and Tr2> a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = -1mA -12 - - V (BR)DSS GS D voltage V (BR)DSS I = -1mA D Breakdown voltage - -5.0 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = -12V, V = 0V - - -10 A DSS DS GS drain current Gate - Source I V = 0V, V = -8V - - -10 A GSS DS GS leakage current Gate threshold V V = -6V, I = -1mA -0.3 - -1.0 V GS(th) DS D voltage V I = -1mA GS(th) D Gate threshold voltage - 2.7 - V/ temperature coefficient T referenced to 25 j V = -4.5V, I = -5.5A - 15 22 GS D V = -2.5V, I = -2.7A - 19 28 GS D Static drain - source *4 R m DS(on) on - state resistance V = -1.8V, I = -2.7A - 24 38 GS D V = -1.5V, I = -1.1A - 29 58 GS D *4 g V = -6V, I = -5.5A Transconductance 8.5 - - S fs DS D *1 Limited only by maximum temperature allowed. *2 Pw 10s, Duty cycle 1% *3 Mounted on a ceramic board. *4 Pulsed www.rohm.com 2014 ROHM Co., Ltd. All rights reserved. 2/11 20140806 - Rev.001

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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