X-On Electronics has gained recognition as a prominent supplier of QS8J2TR MOSFETs across the USA, India, Europe, Australia, and various other global locations. QS8J2TR MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

QS8J2TR ROHM

Hot QS8J2TR electronic component of ROHM
QS8J2TR ROHM
QS8J2TR MOSFETs
QS8J2TR  Semiconductors

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See Product Specifications
Part No. QS8J2TR
Manufacturer: ROHM
Category: MOSFETs
Description: Mosfet Array 2 P-Channel (Dual) 12V 4A 550mW Surface Mount TSMT8
Datasheet: QS8J2TR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.511 ea
Line Total: USD 0.51 
Availability - 95
Ship by Mon. 05 May to Thu. 08 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
95
Ship by Mon. 05 May to Thu. 08 May
MOQ : 1
Multiples : 1
1 : USD 0.511
10 : USD 0.5015
30 : USD 0.4945
100 : USD 0.3758

1495
Ship by Thu. 24 Apr to Mon. 28 Apr
MOQ : 1
Multiples : 1
1 : USD 1.3375
10 : USD 0.894
100 : USD 0.5786
500 : USD 0.4697
1000 : USD 0.4345
3000 : USD 0.3949
6000 : USD 0.3938
9000 : USD 0.3795
24000 : USD 0.3784

363
Ship by Mon. 28 Apr to Fri. 02 May
MOQ : 126
Multiples : 1
126 : USD 1.365
200 : USD 1.0491

2910
Ship by Mon. 28 Apr to Fri. 02 May
MOQ : 159
Multiples : 1
159 : USD 1.1237

213
Ship by Mon. 28 Apr to Fri. 02 May
MOQ : 159
Multiples : 1
159 : USD 1.618

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Series
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
LoadingGif
 
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We are delighted to provide the QS8J2TR from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the QS8J2TR and other electronic components in the MOSFETs category and beyond.

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QS8J2 Datasheet -12V Pch + Pch Middle Power MOSFET llOutline TSMT8 V -12V DSS R (Max.) 36m DS(on) I 4A D P 1.5W D llFeatures llInner circuit 1) Low on - resistance. 2) -1.5V Drive. 3) Built-in G-S protection diode. 4) Small surface mount package(TSMT8) 5) Pb-free lead plating RoHS compliant llPackaging specifications Embossed Packing Tape llApplication Reel size (mm) 180 Switching Tape width (mm) 8 Type Basic ordering unit (pcs) 3000 Taping code TR Marking J02 llAbsolute maximum ratings (T = 25C) <It is the same ratings for the Tr1 and Tr2> a Parameter Symbol Value Unit V Drain - Source voltage -12 V DSS Continuous drain current I 4 A D *1 I Pulsed drain current 12 A D,pulse V Gate - Source voltage 10 V GSS total 1.5 *2 P D Power dissipation element 1.25 W *3 P total 0.7 D T Junction temperature 150 j T Range of storage temperature -55 to +150 stg www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 1/11 20150730 - Rev.002 QS8J2 Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. total - - 83.3 *2 R thJA Thermal resistance, junction - ambient element - - 100 /W *3 R total - - 178 thJA llElectrical characteristics (T = 25C) <It is the same characteristics for the Tr1 and Tr2> a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = -1mA -12 - - V (BR)DSS GS D voltage V I = -1mA (BR)DSS D Breakdown voltage - -21.9 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = -12V, V = 0V - - -1 A DSS DS GS drain current Gate - Source I V = 0V, V = 10V - - 10 A GSS DS GS leakage current Gate threshold V V = -6V, I = -1mA -0.3 - -1.0 V GS(th) DS D voltage V I = -1mA GS(th) D Gate threshold voltage - 2.4 - mV/ temperature coefficient T referenced to 25 j V = -4.5V, I = -4A - 26 36 GS D V = -2.5V, I = -2A - 36 50 GS D Static drain - source *4 R m DS(on) on - state resistance V = -1.8V, I = -2A - 46 69 GS D V = -1.5V, I = -0.8A - 66 132 GS D R Gate input resistance f = 1MHz, open drain - 15 - G Forward Transfer *4 Y V = -6V, I = -4A 5.5 - - S fs DS D Admittance www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2/11 20150730 - Rev.002

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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