QS8K13TCR ROHM

QS8K13 Datasheet 30V Nch+Nch Small Signal MOSFET llOutline V 30V DSS R (Max.) 28m DS(on) TSMT8 I 6A D P 1.5W D llFeatures llInner circuit 1) Low on - resistance. 2) Small Surface Mount Package (TSMT8). llPackaging specifications Embossed Packing Tape llApplication Reel size (mm) 180 Switching Tape width (mm) 8 Type Basic ordering unit (pcs) 3000 Taping code TCR Marking K13 llAbsolute maximum ratings (T = 25C ,unless otherwise specified) <Tr1 and Tr2> a Parameter Symbol Value Unit V Drain - Source voltage 30 V DSS Continuous drain current I 6 A D *1 I Pulsed drain current 18 A DP V Gate - Source voltage 20 V GSS total 1.5 *2 P D Power dissipation element 1.25 W *3 P total 1.1 D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 2016 ROHM Co., Ltd. All rights reserved. 1/11 20160831 - Rev.001 QS8K13 Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. total - - 83.3 *2 R thJA Thermal resistance, junction - ambient element - - 100 /W *3 R total - - 113 thJA llElectrical characteristics (T = 25C) <Tr1 and Tr2> a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 30 - - V (BR)DSS GS D voltage V I = 1mA (BR)DSS D Breakdown voltage - 34.15 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = 30V, V = 0V - - 1 A DSS DS GS drain current Gate - Source I V = 0V, V = 20V - - 10 A GSS DS GS leakage current Gate threshold V V = 10V, I = 1mA 1.0 - 2.5 V GS(th) DS D voltage V I = 1mA GS(th) D Gate threshold voltage - -2.34 - mV/ temperature coefficient T referenced to 25 j V = 10V, I = 6A - 20 28 GS D Static drain - source *4 R V = 4.5V, I = 6A - 25 35 m DS(on) GS D on - state resistance V = 4.0V, I = 6A - 28 39 GS D Gate resistance R f = 1MHz, open drain - 0.6 - G Forward Transfer *4 Y V = 10V, I = 6A 3.0 - - S fs DS D Admittance www.rohm.com 2016 ROHM Co., Ltd. All rights reserved. 2/11 20160831 - Rev.001