CPC3701 60V, Depletion-Mode, N-Channel Vertical DMOS FET INTEGRATED CIRCUITS DIVISION V / R I (min) Package Description (BR)DSX DS(on) DSS V (max) (BR)DGX The CPC3701 is an N-channel, depletion mode, field 60V 1 600mA SOT-89 effect transistor (FET) that utilizes IXYS Integrated Circuits Divisions proprietary third-generation vertical DMOS process. The third-generation process realizes world class, high voltage MOSFET performance Features in an economical silicon gate process. Our vertical Depletion Mode Device Offers Low R DS(on) DMOS process yields a robust device, with high input at Cold Temperatures impedance, for use in high-power applications. The Low On-Resistance: 1 max. at 25C CPC3701 is a highly reliable FET device that has High Input Impedance been used extensively in our Solid State Relays for Low V Voltage: -1.4 to -3.1V GS(off) industrial and security applications. Small Package Size SOT-89 The CPC3701 has a minimum breakdown voltage of 60V, and is available in the SOT-89 package. As with Applications all MOS devices, the FET structure prevents thermal Ignition Modules runaway and thermal-induced secondary breakdown. Normally-On Switches Solid State Relays Converters Ordering Information Security Part Description Power Supplies CPC3701CTR N-Channel Depletion Mode FET, SOT-89 Pkg. Tape and Reel (1000/Reel) Package Pinout (SOT-89) Circuit Symbol D D G G D S S DS-CPC3701-R06 1 www.ixysic.comCPC3701 INTEGRATED CIRCUITS DIVISION Absolute Maximum Ratings 25C Absolute Maximum Ratings are stress ratings. Stresses in Parameter Ratings Units excess of these ratings can cause permanent damage to the Drain-to-Source Voltage 60 V P device. Functional operation of the device at conditions beyond Gate-to-Source Voltage 15 V P those indicated in the operational sections of this data sheet is Pulsed Drain Current 1 A 1 not implied. Total Package Dissipation 1.1 W Operational Temperature -55 to +125 C Storage Temperature -55 to +125 C 1 Mounted on 1 x1 FR4 board. Electrical Characteristics 25C (Unless Otherwise Noted) Parameter Symbol Conditions Min Typ Max Units Drain-to-Source Breakdown Voltage V V = -5.5V, I =100A 60 - - V (BR)DSX GS D Gate-to-Source Off Voltage V V = 5V, I =1A -1.4 - -3.1 V GS(off) DS D Change in V with Temperature dV /dT V = 5V, I =1A - - 4.5 mV/C GS(off) GS(off) DS D Gate Body Leakage Current I V =15V, V =0V - - 100 nA GSS GS DS V = -5.5V, V =60V - - 1 A GS DS Drain-to-Source Leakage Current I D(off) V = -5V, V =40V, T =125C - - 1 mA GS DS A Saturated Drain-to-Source Current I V = 0V, V =15V 600 - - mA DSS GS DS Static Drain-to-Source On-State Resistance R -- 1 DS(on) V = 0V, I =300mA GS D Change in R with Temperature dR /dT - - 1.1 %/C DS(on) DS(on) Turn-On Delay Time t V = 25V -70 d(on) DS Rise Time t I = 300mA -40 r D - ns Turn-Off Delay Time t V = 0V to -10V -50 d(off) GS Fall Time t R = 50 - 150 f gen Source-Drain Diode Voltage Drop V V = -5V, I =300mA - 0.6 1.8 V SD GS SD Thermal Resistance (Junction to Ambient) R - - 90 - C/W JA Switching Waveform & Test Circuit V DD R L 0V 90% PULSE GENERATOR INPUT OUTPUT 10% -10V R gen t t on off t t t t d(on) f d(off) r D.U.T. V DS INPUT 90% 90% OUTPUT 0V 10% 10% 2 R06 www.ixysic.com