CPC5602 N-Channel Depletion Mode FET INTEGRATED CIRCUITS DIVISION Parameter Rating Units Description Drain-to-Source Voltage - V 350 V The CPC5602 is an N-channel depletion mode Field DS Effect Transistor (FET) that utilizes IXYS Integrated Max On-Resistance - R 14 DS(on) Circuits Divisions proprietary third generation vertical Max Power 2.5 W DMOS process. The third generation process realizes world class, high voltage MOSFET performance in an economical silicon gate process. The vertical Features DMOS process yields a highly reliable device, 350V Drain-to-Source Voltage particularly in difficult application environments such Depletion Mode Device Offers Low R DS(on) as telecommunications, security, and power supplies. at Cold Temperatures Low On-resistance: 8 (Typical) 25C One of the primary applications for the CPC5602 is Low V Voltage: -2.0V to -3.6V as a linear regulator/hook switch for the LITELINK GS(off) High Input Impedance family of Data Access Arrangements (DAA) Devices Low Input and Output Leakage CPC5620A, CPC5621A, and CPC5622A. Small Package Size SOT-223 The CPC5602 has a typical on-resistance of 8, a PC Card (PCMCIA) Compatible drain-to-source voltage of 350V, and is available in an PCB Space and Cost Savings SOT-223 package. As with all MOS devices, the FET structure prevents thermal runaway and thermal-induced secondary breakdown. Applications Support Component for LITELINK Data Access Arrangement (DAA) Ordering Information Telecommunications Part Description Normally On Switches CPC5602C N-Channel Depletion Mode FET, SOT-223 Pkg. Ignition Modules Cut-Tape, Available in Quantities of 200, 400, Converters 600, and 800 Only (see Note 1) Security CPC5602CTR N-Channel Depletion Mode FET, SOT-223 Pkg. Power Supplies Tape and Reel (1000/Reel) Note 1: Orders for 1000 or greater must be for theCT part option and in increments of 1000. Package Pinout D 4 123 G D S Pin Number Name 1GATE 2 DRAIN 3 SOURCE 4 DRAIN Pb e3 DS-CPC5602-R09 1 www.ixysic.comCPC5602 INTEGRATED CIRCUITS DIVISION Absolute Maximum Ratings 25C Absolute Maximum Ratings are stress ratings. Stresses in Parameter Ratings Units excess of these ratings can cause permanent damage to the Drain-to-Source Voltage (V ) 350 V DS device. Functional operation of the device at conditions beyond Gate-to-Source Voltage (V ) 20 V GS those indicated in the operational sections of this data sheet is Total Package Dissipation 2.5 W o not implied. Operational Temperature -40 to +85 C o Storage Temperature -40 to +125 C o Electrical Characteristics 25 C (Unless Otherwise Specified) Parameter Symbol Conditions Min Typ Max Units Gate-to-Source Off Voltage V I = 2A, V =10V, V =100V -3.6 -2.62 -2 V GS(off) D DS DS V = -5V, V =190V - - 20 nA GS DS Drain-to-Source Leakage Current I DS(off) V = -5V, V =350V - - 1 A GS DS Drain Current V = -2.7V, V =5V, V =50V - - 5 mA GS DS DS I D V = -0.57V, V =5V 130 - - mA GS DS On-Resistance R V = -0.35V, I =50mA - 8 14 DS(on) GS DS Gate Leakage Current I V =10V, V =-10V - - 0.1 A GSS GS GS Gate Capacitance C V = V =0V - - 300 pF ISS DS GS Thermal Characteristics Parameter Symbol Conditions Min Typ Max Units Thermal Resistance R - - - 14 C/W JC R09 2 www.ixysic.com