QS8M12TCR ROHM

Data Sheet 4V Drive Nch + Pch MOSFET QS8M12 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET/ TSMT8 (8) (7) (6) (5) Silicon P-channel MOSFET Features 1) Low on-resistance. (1) (2) (3) (4) 2) High power package(TSMT8). 3) Low voltage drive(4V drive). Abbreviated symbol : M12 Application Switching Inner circuit (8) (7) (6) (5) Packaging specifications (1) Tr1 Source (2) Tr1 Gate Package Taping 2 2 (3) Tr2 Source Type Code TCR (4) Tr2 Gate (5) Tr2 Drain Basic ordering unit (pieces) 3000 1 1 (6) Tr2 Drain QS8M12 (7) Tr1 Drain (1) (2) (3) (4) (8) Tr1 Drain 1 ESD PROTECTION DIODE 2 BODY DIODE Absolute maximum ratings (Ta = 25 C) Limits Parameter Symbol Unit Tr1 : N-ch Tr2 : P-ch Drain-source voltage V 30 30 V DSS Gate-source voltage V 20 20 V GSS Continuous I 4 4A D Drain current *1 Pulsed I 12 12 A DP Continuous I 1.0 1.0 A Source current s *1 (Body Diode) 12 12 A Pulsed I sp *2 1.5 W / TOTAL P Power dissipation D 1.25 W / ELEMENT Channel temperature Tch 150 C Range of storage temperature Tstg 55 to 150 C *1 Pw10s, Duty cycle1% *2 Mounted on a ceramic board. www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2011.05 - Rev.A 1/10Data Sheet QS8M12 Electrical characteristics (Ta = 25 C) <Tr1(Nch)> Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage I -- 10 AV =20V, V =0V GSS GS DS Drain-source breakdown voltage V 30 - - V I =1mA, V =0V (BR)DSS D GS Zero gate voltage drain current I -- 1 AV =30V, V =0V DSS DS GS Gate threshold voltage V 1.0 - 2.5 V V =10V, I =1mA GS (th) DS D -30 42 I =4A, V =10V D GS Static drain-source on-state * R -40 56 m I =4A, V =4.5V DS (on) D GS resistance 45 63 I =4A, V =4V D GS * Forward transfer admittance l Y l 2.5 - - S V =10V, I =4A fs DS D Input capacitance C - 250 - pF V =10V iss DS Output capacitance C - 90 - pF V =0V oss GS Reverse transfer capacitance C - 45 - pF f=1MHz rss * Turn-on delay time t -7 - nsI =2A, V 15V d(on) D DD * Rise time t - 30 - ns V =10V r GS * Turn-off delay time t - 30 - ns R =7.5 d(off) L Fall time t * -5 - nsR =10 f G * Total gate charge Q - 3.4 - nC I =4A, V 15V g D DD * Gate-source charge Q - 1.2 - nC V =5V gs GS Gate-drain charge Q * - 1.3 - nC gd *Pulsed Body diode characteristics (Source-Drain) (Ta = 25 C) Parameter Symbol Min. Typ. Max. Unit Conditions * Forward Voltage V - - 1.2 V I =4A, V =0V SD s GS *Pulsed www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2/10 2011.05 - Rev.A