R5013ANX
Transistors
10V Drive Nch MOSFET
R5013ANX
z Dimensions (Unit : mm)
z Structure
TO-220FM
Silicon N-channel MOSFET
10.0 3.2 4.5
2.8
z Features
1) Low on-resistance.
1.2
1.3
2) Fast switching speed.
3) Wide SOA (safe operating area).
0.8
(1)Base
4) Gate-source voltage (VGSS) 2.54 2.54 0.75 2.6
(2)Collector ( ) ( )( )
1 2 3
guaranteed to be r 30V. (3)Emitter
5) Drive circuits can be simple.
6) Parallel use is easy.
zApplications
Switching
z z Packaging specifications z Inner circuit
Package Bulk
Code
Type Basic ordering unit (pieces) 500
1
R5013ANX
zz Absolute maximum ratings (Ta=25q C)
Parameter Symbol Limits Unit
(1) (2) (3)
Drain-source voltage VDSS 500 V
(1) Gate
(2) Drain
Gate-source voltage VGSS 30 V
1 Body Diode
(3) Source
3
Continuous ID 13 A
Drain current
1
Pulsed 52
IDP A
3
Continuous IS 13 A
Source current
1
(Body Diode)
Pulsed ISP 52 A
2
Avalanche Current IAS 13 A
2
Avalanche Energy EAS 46
mJ
Total power dissipation (Tc=25C) PD 50 W
Channel temperature Tch 150 C
Range of storage temperature Tstg 55 to +150 C
1 Pw10s, Duty cycle1%
2 L 500H, VDD=50V, RG=25, Starting, Tch=25C
3 Limited only by maximum tempterature allowed
z z Thermal resistance
Parameter Symbol Limits Unit
Channel to case Rth(ch-c) 2.5 C/W
Rev.A 1/5
Not Recommended for
New Designs
14.0 15.0
12.0
2.5 8.0R5013ANX
Transistors
z Electrical characteristics (Ta=25q C)
Parameter Symbol Min. Max. Unit Conditions
Typ.
Gate-source leakage IGSS 100 nA VGS=30V, VDS=0V
Drain-source breakdown voltage V(BR)DSS 500 V ID=1mA, VGS=0V
Zero gate voltage drain current IDSS 100 A VDS=500V, VGS=0V
Gate threshold voltage VGS(th) 2.5 4.5 V VDS=10V, ID=1mA
Static drain-source on-state resistance RDS(on) 0.38 ID=6.5A, VGS=10V
0.29
Forward transfer admittance | Yfs | 4.0 S ID=6.5A, VDS=10V
Ciss pF VDS=25V
Input capacitance 1300
Output capacitance Coss 500 pF VGS=0V
Reverse transfer capacitance Crss 40 pF f=1MHz
Turn-on delay time td(on) ns ID=6.5A, VDD 250V
30
Rise time tr ns VGS=10V
32
td(off) ns RL=38.5
Turn-off delay time 90
tf ns RG=10
Fall time 30
Total gate charge Qg 35 nC VDD 250V
ID=13A
Gate-source charge Qgs nC
8
VGS=10V
RL=19.2 / RG=10
Gate-drain charge Qgd nC
15
Pulsed
z z Body diode characteristics (Source-drain) (Ta=25q C)
Parameter Symbol
Min. Typ. Max. Unit Conditions
Forward voltage VSD 1.5 V IS= 13A, VGS=0V
Pulsed
Rev.A 2/5
Not Recommended for
New Designs