X-On Electronics has gained recognition as a prominent supplier of R5013ANXFU6 MOSFETs across the USA, India, Europe, Australia, and various other global locations. R5013ANXFU6 MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

R5013ANXFU6 ROHM

R5013ANXFU6 electronic component of ROHM
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Part No.R5013ANXFU6
Manufacturer: ROHM
Category: MOSFETs
Description: Trans MOSFET N-CH Si 500V 13A 3-Pin(3+Tab) TO-220FM Bulk
Datasheet: R5013ANXFU6 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
5: USD 8.386 ea
Line Total: USD 41.93 
Availability - 0
MOQ: 5  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 1
Multiples : 1
1 : USD 4.3373
10 : USD 3.7428
100 : USD 3.0663

0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 5
Multiples : 1
5 : USD 8.386
10 : USD 5.6858
50 : USD 4.6969

   
Manufacturer
Product Category
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We are delighted to provide the R5013ANXFU6 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the R5013ANXFU6 and other electronic components in the MOSFETs category and beyond.

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R5013ANX Transistors 10V Drive Nch MOSFET R5013ANX z Dimensions (Unit : mm) z Structure TO-220FM Silicon N-channel MOSFET 10.0 3.2 4.5 2.8 z Features 1) Low on-resistance. 1.2 1.3 2) Fast switching speed. 3) Wide SOA (safe operating area). 0.8 (1)Base 4) Gate-source voltage (VGSS) 2.54 2.54 0.75 2.6 (2)Collector ( ) ( )( ) 1 2 3 guaranteed to be r 30V. (3)Emitter 5) Drive circuits can be simple. 6) Parallel use is easy. zApplications Switching z z Packaging specifications z Inner circuit Package Bulk Code Type Basic ordering unit (pieces) 500 1 R5013ANX zz Absolute maximum ratings (Ta=25q C) Parameter Symbol Limits Unit (1) (2) (3) Drain-source voltage VDSS 500 V (1) Gate (2) Drain Gate-source voltage VGSS 30 V 1 Body Diode (3) Source 3 Continuous ID 13 A Drain current 1 Pulsed 52 IDP A 3 Continuous IS 13 A Source current 1 (Body Diode) Pulsed ISP 52 A 2 Avalanche Current IAS 13 A 2 Avalanche Energy EAS 46 mJ Total power dissipation (Tc=25C) PD 50 W Channel temperature Tch 150 C Range of storage temperature Tstg 55 to +150 C 1 Pw10s, Duty cycle1% 2 L 500H, VDD=50V, RG=25, Starting, Tch=25C 3 Limited only by maximum tempterature allowed z z Thermal resistance Parameter Symbol Limits Unit Channel to case Rth(ch-c) 2.5 C/W Rev.A 1/5 Not Recommended for New Designs 14.0 15.0 12.0 2.5 8.0R5013ANX Transistors z Electrical characteristics (Ta=25q C) Parameter Symbol Min. Max. Unit Conditions Typ. Gate-source leakage IGSS 100 nA VGS=30V, VDS=0V Drain-source breakdown voltage V(BR)DSS 500 V ID=1mA, VGS=0V Zero gate voltage drain current IDSS 100 A VDS=500V, VGS=0V Gate threshold voltage VGS(th) 2.5 4.5 V VDS=10V, ID=1mA Static drain-source on-state resistance RDS(on) 0.38 ID=6.5A, VGS=10V 0.29 Forward transfer admittance | Yfs | 4.0 S ID=6.5A, VDS=10V Ciss pF VDS=25V Input capacitance 1300 Output capacitance Coss 500 pF VGS=0V Reverse transfer capacitance Crss 40 pF f=1MHz Turn-on delay time td(on) ns ID=6.5A, VDD 250V 30 Rise time tr ns VGS=10V 32 td(off) ns RL=38.5 Turn-off delay time 90 tf ns RG=10 Fall time 30 Total gate charge Qg 35 nC VDD 250V ID=13A Gate-source charge Qgs nC 8 VGS=10V RL=19.2 / RG=10 Gate-drain charge Qgd nC 15 Pulsed z z Body diode characteristics (Source-drain) (Ta=25q C) Parameter Symbol Min. Typ. Max. Unit Conditions Forward voltage VSD 1.5 V IS= 13A, VGS=0V Pulsed Rev.A 2/5 Not Recommended for New Designs

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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