R6008FNJ
Nch 600V 8A Power MOSFET Datasheet
lOutline
V
600V
DSS
LPTS
(2)
(SC-83)
R (Max.)
0.95W
DS(on)
I
8A
D
(1)
P
50W
(3)
D
lFeatures lInner circuit
1) Low on-resistance.
2) Fast switching speed. (1) Gate
(2) Drain
3) Gate-source voltage (V ) guaranteed to be 30V.
(3) Source
GSS
4) Drive circuits can be simple.
*1 Body Diode
5) Parallel use is easy.
6) Pb-free lead plating ; RoHS compliant
lPackaging specifications
Packaging Taping
Reel size (mm) 330
Tape width (mm) 24
lApplication
Type
Basic ordering unit (pcs) 1,000
Switching Power Supply
Taping code TL
Marking R6008FNJ
lAbsolute maximum ratings(T = 25C)
a
Parameter Symbol Value Unit
Drain - Source voltage V 600 V
DSS
*1
T = 25C
I 8 A
c
D
Continuous drain current
*1
T = 100C A
I 3.9
c
D
*2
Pulsed drain current I 32 A
D,pulse
V
Gate - Source voltage 30 V
GSS
*3
Avalanche energy, single pulse 4.3 mJ
E
AS
*4
Avalanche energy, repetitive E 3.4 mJ
AR
*3
Avalanche current I 4 A
AR
Power dissipation (T = 25C) P
50 W
c D
T
Junction temperature 150 C
j
Range of storage temperature T C
-55 to +150
stg
*5
Reverse diode dv/dt 15 V/ns
dv/dt
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2012 ROHM Co., Ltd. All rights reserved. 2012.07 - Rev.B
1/13Data Sheet
R6008FNJ
lAbsolute maximum ratings
Parameter Symbol Conditions Values Unit
V = 480V, I = 8A
DS D
Drain - Source voltage slope dv/dt 50 V/ns
T = 125C
j
lThermal resistance
Values
Parameter Symbol Unit
Min. Typ. Max.
R
Thermal resistance, junction - case - - 2.5 C/W
thJC
Thermal resistance, junction - ambient R - - 80 C/W
thJA
T
Soldering temperature, wavesoldering for 10s - - 265 C
sold
lElectrical characteristics(T = 25C)
a
Values
Parameter Symbol Conditions Unit
Min. Typ. Max.
Drain - Source breakdown
V V = 0V, I = 1mA
600 - - V
(BR)DSS GS D
voltage
Drain - Source avalanche
V V = 0V, I = 8A
- 700 - V
(BR)DS GS D
breakdown voltage
V = 600V, V = 0V
DS GS
mA
Zero gate voltage
I T = 25C
- 1 100
DSS j
drain current
T = 125C
- - 10 mA
j
Gate - Source leakage current I V = 30V, V = 0V - - nA
100
GSS GS DS
V V = 10V, I = 1mA
Gate threshold voltage 2.0 - 4.0 V
GS (th) DS D
V = 10V, I = 4A
GS D
Static drain - source
*6
T = 25C
R - 0.73 0.95 W
j
DS(on)
on - state resistance
T = 125C
- 1.62 -
j
R
Gate input resistance f = 1MHz, open drain - 8.0 - W
G
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2012 ROHM Co., Ltd. All rights reserved. 2012.07 - Rev.B
2/13