X-On Electronics has gained recognition as a prominent supplier of R6008FNJTL MOSFETs across the USA, India, Europe, Australia, and various other global locations. R6008FNJTL MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

R6008FNJTL ROHM

R6008FNJTL electronic component of ROHM
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See Product Specifications
Part No.R6008FNJTL
Manufacturer: ROHM
Category: MOSFETs
Description: Trans MOSFET N-CH 600V 8A 3-Pin(2+Tab) LPTS T/R
Datasheet: R6008FNJTL Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 3.597 ea
Line Total: USD 3.6 
Availability - 970
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
970
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 3.597
10 : USD 3.278
25 : USD 2.937
100 : USD 2.772
250 : USD 2.563
500 : USD 2.409
1000 : USD 2.101

776
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 14
Multiples : 1
14 : USD 3.0712
50 : USD 2.6975
100 : USD 2.5187
200 : USD 2.5025
500 : USD 2.1613

97
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 67
Multiples : 1
67 : USD 3.7711
100 : USD 3.529

   
Manufacturer
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Channel Mode
Gate-Source Voltage Max
Power Dissipation
Mounting
Continuous Drain Current
Type
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Pin Count
Polarity
Operating Temperature Classification
Drain-Source On-Volt
Package Type
Number Of Elements
Rad Hardened
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We are delighted to provide the R6008FNJTL from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the R6008FNJTL and other electronic components in the MOSFETs category and beyond.

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R6008FNJ Nch 600V 8A Power MOSFET Datasheet lOutline V 600V DSS LPTS (2) (SC-83) R (Max.) 0.95W DS(on) I 8A D (1) P 50W (3) D lFeatures lInner circuit 1) Low on-resistance. 2) Fast switching speed. (1) Gate (2) Drain 3) Gate-source voltage (V ) guaranteed to be 30V. (3) Source GSS 4) Drive circuits can be simple. *1 Body Diode 5) Parallel use is easy. 6) Pb-free lead plating ; RoHS compliant lPackaging specifications Packaging Taping Reel size (mm) 330 Tape width (mm) 24 lApplication Type Basic ordering unit (pcs) 1,000 Switching Power Supply Taping code TL Marking R6008FNJ lAbsolute maximum ratings(T = 25C) a Parameter Symbol Value Unit Drain - Source voltage V 600 V DSS *1 T = 25C I 8 A c D Continuous drain current *1 T = 100C A I 3.9 c D *2 Pulsed drain current I 32 A D,pulse V Gate - Source voltage 30 V GSS *3 Avalanche energy, single pulse 4.3 mJ E AS *4 Avalanche energy, repetitive E 3.4 mJ AR *3 Avalanche current I 4 A AR Power dissipation (T = 25C) P 50 W c D T Junction temperature 150 C j Range of storage temperature T C -55 to +150 stg *5 Reverse diode dv/dt 15 V/ns dv/dt www.rohm.com 2012 ROHM Co., Ltd. All rights reserved. 2012.07 - Rev.B 1/13Data Sheet R6008FNJ lAbsolute maximum ratings Parameter Symbol Conditions Values Unit V = 480V, I = 8A DS D Drain - Source voltage slope dv/dt 50 V/ns T = 125C j lThermal resistance Values Parameter Symbol Unit Min. Typ. Max. R Thermal resistance, junction - case - - 2.5 C/W thJC Thermal resistance, junction - ambient R - - 80 C/W thJA T Soldering temperature, wavesoldering for 10s - - 265 C sold lElectrical characteristics(T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 600 - - V (BR)DSS GS D voltage Drain - Source avalanche V V = 0V, I = 8A - 700 - V (BR)DS GS D breakdown voltage V = 600V, V = 0V DS GS mA Zero gate voltage I T = 25C - 1 100 DSS j drain current T = 125C - - 10 mA j Gate - Source leakage current I V = 30V, V = 0V - - nA 100 GSS GS DS V V = 10V, I = 1mA Gate threshold voltage 2.0 - 4.0 V GS (th) DS D V = 10V, I = 4A GS D Static drain - source *6 T = 25C R - 0.73 0.95 W j DS(on) on - state resistance T = 125C - 1.62 - j R Gate input resistance f = 1MHz, open drain - 8.0 - W G www.rohm.com 2012 ROHM Co., Ltd. All rights reserved. 2012.07 - Rev.B 2/13

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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