X-On Electronics has gained recognition as a prominent supplier of R6015ENJTL MOSFETs across the USA, India, Europe, Australia, and various other global locations. R6015ENJTL MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

R6015ENJTL ROHM

R6015ENJTL electronic component of ROHM
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See Product Specifications
Part No.R6015ENJTL
Manufacturer: ROHM
Category: MOSFETs
Description: ROHM Semiconductor MOSFET
Datasheet: R6015ENJTL Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 3.608 ea
Line Total: USD 3.61 
Availability - 759
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
759
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 3.608
10 : USD 2.882
25 : USD 2.838
100 : USD 2.244
500 : USD 2.024
1000 : USD 1.969

87
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 15
Multiples : 1
15 : USD 2.8763
50 : USD 2.7137

970
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 56
Multiples : 1
56 : USD 3.7328
100 : USD 2.7901
500 : USD 2.3442

   
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Operating Temp Range
Number Of Elements
Mounting
Pin Count
Drain-Source On-Volt
Operating Temperature Classification
Gate-Source Voltage Max
Power Dissipation
Rad Hardened
Continuous Drain Current
Polarity
Type
Package Type
Configuration
Series
Transistor Type
Brand
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the R6015ENJTL from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the R6015ENJTL and other electronic components in the MOSFETs category and beyond.

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R6015ENJ Datasheet Nch 600V 15A Power MOSFET llOutline TO-263S V 600V DSS SC-83 R (Max.) 0.29 DS(on) LPT(S) I 15A D P 184W D llInner circuit llFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (V ) guaranteed to GSS be 20V. 4) Drive circuits can be simple. 5) Parallel use is easy. 6) Pb-free lead plating RoHS compliant llPackaging specifications Embossed Packing Tape Reel size (mm) 330 llApplication Tape width (mm) 24 Type Switching Quantity (pcs) 1000 Taping code TL Marking R6015ENJ llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit V Drain - Source voltage 600 V DSS *1 T = 25C I 15 A C D Continuous drain current *1 T = 100C I 8.1 A C D *2 I Pulsed drain current 30 A DP static 20 V Gate - Source voltage V GSS AC(f 1Hz) 30 V I Avalanche current, repetitive 2.4 A AR *3 E Avalanche energy, single pulse 284 mJ AS *3 E Avalanche energy, repetitive 0.43 mJ AR *4 Power dissipation (T = 25C) P 184 W C D T Junction temperature 150 j T Operating junction and storage temperature range -55 +150 stg www.rohm.com 1/12 20190527 - Rev.003 2019 ROHM Co., Ltd. All rights reserved. R6015ENJ Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Conditions Values Unit Reverse diode dv/dt dv/dt - 15 V/ns Drain - Source voltage slope dv/dt V = 480V, T = 25 50 V/ns DS j llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. R Thermal resistance, junction - case - - 0.68 /W thJC *5 R Thermal resistance, junction - ambient - - 80 /W thJA T Soldering temperature, wavesoldering for 10s - - 265 sold llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 600 - - V (BR)DSS GS D voltage V = 600V, V = 0V DS GS Zero gate voltage I T = 25C - 0.1 100 A DSS j drain current T = 125C - - 1000 j I Gate - Source leakage current V = 20V, V = 0V - - 100 nA GSS GS DS V Gate threshold voltage V = 10V, I = 1mA 2 - 4 V GS(th) DS D V = 10V, I = 6.5A GS D Static drain - source *6 R T = 25C - 0.26 0.29 DS(on) j on - state resistance T = 125C - 0.56 - j R Gate resistance f =1MHz, open drain - 7.2 - G www.rohm.com 2/12 20190527 - Rev.003 2019 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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