R6046ANZ1
Nch 600V 46A Power MOSFET Datasheet
l
Outline
V
600V
DSS
TO-247
R (Max.)
0.09W
DS(on)
I
46A
D
(3)
P (2)
120W
D (1)
l l
Features Inner circuit
1) Low on-resistance.
(1) Gate
2) Fast switching speed.
(2) Drain
(3) Source
3) Gate-source voltage (V ) guaranteed to be 30V.
GSS
4) Drive circuits can be simple.
*1 BODY DIODE
5) Parallel use is easy.
6) Pb-free lead plating ; RoHS compliant
lPackaging specifications
Packaging Tube
Reel size (mm) -
Tape width (mm) -
lApplication
Type
Basic ordering unit (pcs) 450
Switching Power Supply
Taping code C9
Marking R6046ANZ1
lAbsolute maximum ratings(T = 25C)
a
Parameter Symbol Value Unit
Drain - Source voltage V 600 V
DSS
*1
T = 25C
I 46 A
c
D
Continuous drain current
*1
T = 100C A
I 22.3
c
D
*2
Pulsed drain current I 115 A
D,pulse
V
Gate - Source voltage 30 V
GSS
*3
Avalanche energy, single pulse 142 mJ
E
AS
*4
Avalanche energy, repetitive E 5.4 mJ
AR
*3
Avalanche current I 23 A
AR
Power dissipation (T = 25C) P
120 W
c D
T
Junction temperature 150 C
j
Range of storage temperature T C
-55 to +150
stg
*5
Reverse diode dv/dt 15 V/ns
dv/dt
www.rohm.com
2013 ROHM Co., Ltd. All rights reserved. 2013.08 - Rev.A
1/13
Not Recommended for
New Designs Data Sheet
R6046ANZ1
lAbsolute maximum ratings
Parameter Symbol Conditions Values Unit
V = 480V, I = 46A
DS D
Drain - Source voltage slope dv/dt 50 V/ns
T = 125C
j
lThermal resistance
Values
Parameter Symbol Unit
Min. Typ. Max.
R
Thermal resistance, junction - case - - 1.04 C/W
thJC
Thermal resistance, junction - ambient R - - 30 C/W
thJA
T
Soldering temperature, wavesoldering for 10s - - 265 C
sold
lElectrical characteristics(T = 25C)
a
Values
Parameter Symbol Conditions Unit
Min. Typ. Max.
Drain - Source breakdown
V V = 0V, I = 1mA
600 - - V
(BR)DSS GS D
voltage
Drain - Source avalanche
V V = 0V, I = 23A
- 700 - V
(BR)DS GS D
breakdown voltage
V = 600V, V = 0V
DS GS
Zero gate voltage
I T = 25C
- 0.1 100
mA
DSS j
drain current
T = 125C
- - 1000
j
Gate - Source leakage current I V = 30V, V = 0V - - nA
100
GSS GS DS
V V = 10V, I = 1mA
Gate threshold voltage 2.5 - 4.5 V
GS (th) DS D
V = 10V, I = 23A
GS D
Static drain - source
*6
T = 25C
R - 0.069 0.09 W
j
DS(on)
on - state resistance
T = 125C
- 0.145 -
j
R
Gate input resistance f = 1MHz, open drain - 2.2 - W
G
www.rohm.com
2013 ROHM Co., Ltd. All rights reserved. 2013.08 - Rev.A
2/13
Not Recommended for
New Designs