X-On Electronics has gained recognition as a prominent supplier of RAL035P01TCR MOSFETs across the USA, India, Europe, Australia, and various other global locations. RAL035P01TCR MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

RAL035P01TCR ROHM

RAL035P01TCR electronic component of ROHM
RAL035P01TCR ROHM
RAL035P01TCR MOSFETs
RAL035P01TCR  Semiconductors

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See Product Specifications
Part No. RAL035P01TCR
Manufacturer: ROHM
Category: MOSFETs
Description: ROHM Semiconductor MOSFET Trans MOSFET P-CH 12V 3.5A
Datasheet: RAL035P01TCR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.7712 ea
Line Total: USD 0.77 
Availability - 979
Ship by Wed. 05 Feb to Fri. 07 Feb
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2854
Ship by Fri. 14 Feb to Wed. 19 Feb
MOQ : 1
Multiples : 1
1 : USD 0.4725
10 : USD 0.4186
30 : USD 0.3939
100 : USD 0.2813
500 : USD 0.2708
1000 : USD 0.2639

979
Ship by Wed. 05 Feb to Fri. 07 Feb
MOQ : 1
Multiples : 1
1 : USD 0.7712
10 : USD 0.5075
100 : USD 0.3048
500 : USD 0.2332
1000 : USD 0.2178
3000 : USD 0.1738
9000 : USD 0.1628
24000 : USD 0.1573

34692
Ship by Fri. 07 Feb to Thu. 13 Feb
MOQ : 60
Multiples : 1
60 : USD 1.0904
90 : USD 0.7183
140 : USD 0.4631
200 : USD 0.4615
500 : USD 0.3592
1000 : USD 0.3315
3000 : USD 0.3016
6000 : USD 0.286
12000 : USD 0.2704
24000 : USD 0.2641

1822
Ship by Fri. 07 Feb to Thu. 13 Feb
MOQ : 285
Multiples : 1
285 : USD 0.3587
500 : USD 0.3457
1000 : USD 0.3343

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Series
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the RAL035P01TCR from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RAL035P01TCR and other electronic components in the MOSFETs category and beyond.

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RAL035P01 Datasheet Pch -12V -3.5A Small Signal MOSFET llOutline SOT-363T V -12V DSS TUMT6 R (Max.) 42m DS(on) I 3.5A D P 1.0W D llInner circuit llFeatures 1) Low on - resistance. 2) Small high power package 3) Low voltage drive (1.5V) llPackaging specifications Embossed Packing Tape Reel size (mm) 180 llApplication Tape width (mm) 8 Type Switching Basic ordering unit (pcs) 3000 Taping code TR Marking SB llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V -12 V DSS I Continuous drain current 3.5 A D *1 I Pulsed drain current 12 A DP V Gate - Source voltage 0 -8 V GSS *2 P 1.0 W D Power dissipation *3 P 0.91 W D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 1/11 2016 ROHM Co., Ltd. All rights reserved. 20160610 - Rev.001 RAL035P01 Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *2 R - - 125 /W thJA Thermal resistance, junction - ambient *3 R - - 137 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = -1mA -12 - - V (BR)DSS GS D voltage V I = -1mA (BR)DSS D Breakdown voltage - -5.0 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = -12V, V = 0V - - -10 A DSS DS GS drain current I Gate - Source leakage current V = -8V, V = 0V - - -10 A GSS GS DS Gate threshold voltage V V = -6V, I = -1mA -0.3 - -1.0 V GS(th) DS D V I = -1mA GS(th) D Gate threshold voltage - 2.7 - mV/ temperature coefficient T referenced to 25 j V = -4.5V, I = -3.5A - 30 42 GS D V = -2.5V, I = -1.7A - 40 56 GS D Static drain - source *4 R m DS(on) on - state resistance V = -1.8V, I = -1.7A - 55 82 GS D V = -1.5V, I = -0.7A - 75 150 GS D Gate resistance R f = 1MHz, open drain - 18.1 - G Forward Transfer *4 Y V = -6V, I = -3.5A 4 - - S fs DS D Admittance *1 Pw10s , Duty cycle 1% *2 Mounted on a ceramic board (30300.8mm) 2 *3 Mounted on a FR4 (25250.8mm,Cu pad:625mm ) *4 Pulsed www.rohm.com 2/11 20160610 - Rev.001 2016 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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