X-On Electronics has gained recognition as a prominent supplier of RAL035P01TCR MOSFETs across the USA, India, Europe, Australia, and various other global locations. RAL035P01TCR MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

RAL035P01TCR ROHM

Hot RAL035P01TCR electronic component of ROHM
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Part No.RAL035P01TCR
Manufacturer: ROHM
Category: MOSFETs
Description: ROHM Semiconductor MOSFET Trans MOSFET P-CH 12V 3.5A
Datasheet: RAL035P01TCR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
207: USD 0.1967 ea
Line Total: USD 40.72 
Availability - 34692
Ship by Mon. 11 Nov to Fri. 15 Nov
MOQ: 207  Multiples: 1
Pack Size: 1
Availability Price Quantity
2854
Ship by Mon. 18 Nov to Thu. 21 Nov
MOQ : 1
Multiples : 1
1 : USD 0.3989
10 : USD 0.3511
30 : USD 0.3321
100 : USD 0.3074
500 : USD 0.2959
1000 : USD 0.2882

981
Ship by Fri. 15 Nov to Tue. 19 Nov
MOQ : 1
Multiples : 1
1 : USD 0.5635
10 : USD 0.4473
100 : USD 0.3047
500 : USD 0.2461
1000 : USD 0.215
3000 : USD 0.1828
9000 : USD 0.1713
24000 : USD 0.1656

34692
Ship by Mon. 11 Nov to Fri. 15 Nov
MOQ : 207
Multiples : 1
207 : USD 0.1967
500 : USD 0.1657
1000 : USD 0.1568
3000 : USD 0.149
6000 : USD 0.1412
12000 : USD 0.1334
24000 : USD 0.1301

1822
Ship by Mon. 11 Nov to Fri. 15 Nov
MOQ : 285
Multiples : 1
285 : USD 0.4586

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Series
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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We are delighted to provide the RAL035P01TCR from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RAL035P01TCR and other electronic components in the MOSFETs category and beyond.

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RAL035P01 Datasheet Pch -12V -3.5A Small Signal MOSFET llOutline SOT-363T V -12V DSS TUMT6 R (Max.) 42m DS(on) I 3.5A D P 1.0W D llInner circuit llFeatures 1) Low on - resistance. 2) Small high power package 3) Low voltage drive (1.5V) llPackaging specifications Embossed Packing Tape Reel size (mm) 180 llApplication Tape width (mm) 8 Type Switching Basic ordering unit (pcs) 3000 Taping code TR Marking SB llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V -12 V DSS I Continuous drain current 3.5 A D *1 I Pulsed drain current 12 A DP V Gate - Source voltage 0 -8 V GSS *2 P 1.0 W D Power dissipation *3 P 0.91 W D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 1/11 2016 ROHM Co., Ltd. All rights reserved. 20160610 - Rev.001 RAL035P01 Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *2 R - - 125 /W thJA Thermal resistance, junction - ambient *3 R - - 137 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = -1mA -12 - - V (BR)DSS GS D voltage V I = -1mA (BR)DSS D Breakdown voltage - -5.0 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = -12V, V = 0V - - -10 A DSS DS GS drain current I Gate - Source leakage current V = -8V, V = 0V - - -10 A GSS GS DS Gate threshold voltage V V = -6V, I = -1mA -0.3 - -1.0 V GS(th) DS D V I = -1mA GS(th) D Gate threshold voltage - 2.7 - mV/ temperature coefficient T referenced to 25 j V = -4.5V, I = -3.5A - 30 42 GS D V = -2.5V, I = -1.7A - 40 56 GS D Static drain - source *4 R m DS(on) on - state resistance V = -1.8V, I = -1.7A - 55 82 GS D V = -1.5V, I = -0.7A - 75 150 GS D Gate resistance R f = 1MHz, open drain - 18.1 - G Forward Transfer *4 Y V = -6V, I = -3.5A 4 - - S fs DS D Admittance *1 Pw10s , Duty cycle 1% *2 Mounted on a ceramic board (30300.8mm) 2 *3 Mounted on a FR4 (25250.8mm,Cu pad:625mm ) *4 Pulsed www.rohm.com 2/11 20160610 - Rev.001 2016 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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