X-On Electronics has gained recognition as a prominent supplier of RCX200N20 MOSFETs across the USA, India, Europe, Australia, and various other global locations. RCX200N20 MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

RCX200N20 ROHM

RCX200N20 electronic component of ROHM
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See Product Specifications
Part No.RCX200N20
Manufacturer: ROHM
Category: MOSFETs
Description: ROHM Semiconductor MOSFET
Datasheet: RCX200N20 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.7595 ea
Line Total: USD 1.76 
Availability - 182
Ship by Thu. 14 Nov to Mon. 18 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
182
Ship by Thu. 14 Nov to Mon. 18 Nov
MOQ : 1
Multiples : 1
1 : USD 1.7595
10 : USD 1.3225
100 : USD 1.0419
500 : USD 0.7981
1000 : USD 0.7061
5000 : USD 0.6785
10000 : USD 0.6774

931
Ship by Fri. 08 Nov to Thu. 14 Nov
MOQ : 86
Multiples : 1
86 : USD 1.0611

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Series
Transistor Type
Brand
Fall Time
Rise Time
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Height
Length
Product
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Cnhts
Hts Code
Mxhts
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the RCX200N20 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RCX200N20 and other electronic components in the MOSFETs category and beyond.

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RCX200N20 Nch 200V 20A Power MOSFET Datasheet Outline V 200V DSS TO-220FM R (Max.) 130m DS(on) I 20A D (3) P 48W (2) D (1) Features Inner circuit 1) Low on-resistance. (1) Gate 2) Fast switching speed. 1 (2) Drain (3) Source 3) Drive circuits can be simple. 4) Parallel use is easy. 1 BODY DIODE (1) (2) (3) 5) Pb-free lead plating RoHS compliant 6) 100% Avalanche tested Packaging specifications Packaging Bulk Reel size (mm) - Application Tape width (mm) - Switching Power Supply Type Quantity (pcs) 500 Automotive Motor Drive Taping code - Automotive Solenoid Drive Marking RCX200N20 Absolute maximum ratings(T = 25C) a Parameter Symbol Value Unit Drain - Source voltage V 200 V DSS *1 T = 25C I 20 A c D Continuous drain current *1 T = 100C I 10.8 A c D *2 Pulsed drain current A I 80 D,pulse V Gate - Source voltage 30 V GSS *3 Avalanche energy, single pulse 32.3 mJ E AS *3 Avalanche current I 10 A AR T = 25C P 48 W c D Power dissipation T = 25C P 2.23 W a D T Junction temperature 150 C j Range of storage temperature T C 55 to 150 stg www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2019.05 - Rev.C 1/12Data Sheet RCX200N20 Thermal resistance Values Parameter Symbol Unit Min. Typ. Max. R - - 2.57 C/W Thermal resistance, junction - case thJC R Thermal resistance, junction - ambient - - 56 C/W thJA T Soldering temperature, wavesoldering for 10s - - 265 C sold Electrical characteristics(T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. V V = 0V, I = 1mA Drain - Source breakdown voltage 200 - - V (BR)DSS GS D V = 200V, V = 0V DS GS - -25 T = 25C j Zero gate voltage drain current I A DSS V = 200V, V = 0V DS GS - - 100 T = 125C j I V = 30V, V = 0V Gate - Source leakage current -- 100 nA GSS GS DS Gate threshold voltage V V = 10V, I = 1mA 3.0 - 5.0 V GS (th) DS D V = 10V, I = 10A - 100 130 GS D Static drain - source *4 V = 10V, I = 10A R m GS D DS(on) on - state resistance - 220 310 T = 125C j g V = 10V, I = 10A Forward transfer admittance 4.9 9.8 - S fs DS D www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2019.05 - Rev.C 2/12

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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